BY251P thru BY255P
Vishay General Semiconductor
General Purpose Plastic Rectifier
FEATURES
• Low forward voltage drop
• Low leakage current, I
R
less than 0.1 μA
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-201AD
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
3.0 A
200 V to 1300 V
150 A
5.0 μA
1.1 V
150 °C
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
10 mm lead length
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle average
10 mm lead length
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
T
J
, T
STG
BY251P
200
140
200
BY252P
400
280
400
BY253P
600
420
600
3.0
150
100
- 55 to + 150
BY254P
800
560
800
BY255P
1300
910
1300
UNIT
V
V
V
A
A
μA
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum reverse current
at rated DC blocking voltage
Maximum reverse
recovery time
Typical junction capacitance
Document Number: 88838
Revision: 04-Nov-09
TEST CONDITIONS
3.0 A
T
A
= 25 °C
I
F
= 0.5 A, I
R
= 1.0 V,
I
rr
= 0.25 A
4.0 V, 1 MHz
SYMBOL
V
F
I
R
t
rr
C
J
BY251P
BY252P
BY253P
1.1
5.0
3.0
40
BY254P
BY255P
UNIT
V
μA
μs
pF
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
BY251P thru BY255P
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
θJA
(1)
R
θJL
(1)
BY251P
BY252P
BY253P
20
°C/W
10
BY254P
BY255P
UNIT
Note
(1)
Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION
(Example)
PREFERRED P/N
BY253P-E3/54
BY253P-E3/73
UNIT WEIGHT (g)
1.1
1.1
PREFERRED PACKAGE CODE
54
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
4.0
10
Average Forward Rectified Current (A)
Instantaneous Reverse Leakage
Current (μA)
60 Hz Resistive
or Inductive Load
3.0
T
J
= 125 °C
1
2.0
T
J
= 75 °C
0.1
T
J
= 25 °C
1.0
10 mm Lead Length
0
0
25
50
75
100
125
150
175
0.01
0
20
40
60
80
100
Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current
1000
100
Instantaneous Forward Current (A)
8.3 ms
Single
Half
Sine-Wave
Peak Forward
Surge
Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
10
100
T
A
= 55 °C
1
0
1
10
100
0.1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Number of Cycles at 60 Hz
Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
Fig. 4 - Typical Instantaneous Forward Characteristics
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88838
Revision: 04-Nov-09
BY251P thru BY255P
Vishay General Semiconductor
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Junction Capacitance (pF)
10
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88838
Revision: 04-Nov-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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Document Number: 91000
Revision: 11-Mar-11
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