BY 4 THRU BY 16
High Voltage Silicon Rectifier Diodes
4000V-16000V
1.0A-0.3A
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and Characteristics
Type
Rep. peak reverse volt. Surge peak reverse volt. Max. forward current
Period. Spitzensperrspg. Stoßspitzensperrspg.
Dauergrenzstrom
V
RRM
[V]
V
RSM
[V]
I
FAV
[A]
1
)
4000
6000
8000
12000
16000
4000
6000
8000
12000
16000
1.0
1.0
0.5
0.5
0.3
Forward volt.
Durchlass-Spg.
V
F
[V]
2
)
< 4.0
< 6.0
< 8.0
< 10.0
< 15.0
BY4
BY6
BY8
BY12
BY16
Leakage Current
Sperrstrom
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
T
j
= 25°C
T
j
= 100°C
T
A
= 25°C
T
A
= 25°C
V = V
RRM
V = V
RRM
I
FSM
i
2
t
< 1 µA
< 25 µA
100 A
50 A
2
s
-50...+150°C
-50...+150°C
< 25 K/W
1
)
T
j
T
S
thA
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
BY 4 THRU BY 16
High Voltage Silicon Rectifier Diodes
4000V-16000V
1.0A-0.3A
RATINGS AND CHARACTERISTIC CURVES
120
[%]
100
BY 4 THRU BY 16
10
[A]
1
BY4
BY6
BY8
BY12
BY16
80
60
40
10
-1
20
I
FAV
0
0
T
A
50
100
150
[°C]
1
I
F
10
-2
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Rated forward current versus ambient temperature )
Zul. Richtstrom in Abh. von der Umgebungstemp.
1
)
10
2
[A]
10
î
F
1
1
10
10
2
[n]
10
3
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
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