BYW82...BYW86
Vishay Telefunken
Silicon Mesa Rectifiers
Features
D
D
D
D
D
D
Glass passivated junction
Hermetically sealed package
Controlled avalanche characteristics
Low reverse current
High surge current loading
Electrically equivalent diodes:
BYW82 – 1N5624 BYW83 – 1N5625
BYW84 – 1N5626 BYW85 – 1N5627
94 9588
Applications
Rectifier, general purpose
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Test Conditions
Type
BYW82
BYW83
BYW84
BYW85
BYW86
Symbol
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FRM
I
FAV
P
R
E
R
i
2
*t
T
j
=T
stg
Value
200
400
600
800
1000
100
18
3
1000
20
Unit
V
V
V
V
V
A
A
A
W
mJ
A
2
*s
°
C
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
i
2
*t–rating
Junction and storage
temperature range
t
p
=10ms, half sinewave
T
amb
65
°
C
t
p
=20
m
s, half sinewave,
T
j
=175
°
C
I
(BR)R
=1A, T
j
=175
°
C
x
40
–65...+175
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 37.5mm
Symbol
R
thJA
R
thJA
Value
25
70
Unit
K/W
K/W
Document Number 86051
Rev. 2, 24-Jun-98
www.vishay.de
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BYW82...BYW86
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
y
Reverse recovery charge
Test Conditions
I
F
=3A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
R
=100
m
A, t
p
/T=0.01, t
p
=0.3ms
V
R
=0, f=0.47MHz
I
F
=0.5A, I
R
=1A, i
R
=0.25A
I
F
=1A, d
i
/d
t
=5A/
m
s, V
R
=50V
I
F
=1A, d
i
/d
t
=5A/
m
s
Type
Symbol
V
F
I
R
I
R
V
(BR)
C
D
t
rr
t
rr
Q
rr
Min
Typ
0.1
5
65
2
3
6
Max
1.0
1
10
1600
100
4
6
10
Unit
V
m
A
m
A
V
pF
m
s
m
s
m
C
Characteristics
(T
j
= 25
_
C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
40
I
FAV
– Average Forward Current ( A )
4
30
3
20
l
10
l
2
V
R
= V
R RM
f=1kHz
R
thJA
=25K/W
L=10mm
1
0
0
5
10
15
T
L
=constant
20
25
30
94 9564
0
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
94 9563
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
I
FAV
– Average Forward Current ( A )
2.0
1.6
1.2
0.8
0.4
0
0
40
80
I
R
– Reverse Current (
m
A )
V
R
= V
R RM
f=1kHz
R
thJA
=70K/W
PCB
Scattering Limit
100
10
1
V
R
= V
R RM
0
40
80
120
160
200
0.1
120
160
200
94 9566
94 9565
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Reverse Current vs. Junction Temperature
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2 (4)
Document Number 86051
Rev. 2, 24-Jun-98
BYW82...BYW86
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de
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FaxBack +1-408-970-5600
4 (4)
Document Number 86051
Rev. 2, 24-Jun-98
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