BTA312-800C
4 October 2012
3Q Hi-Com Triac
Product data sheet
1. Product profile
1.1 General description
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. This "series C" triac will commutate the full RMS current at the maximum rated
junction temperature without the aid of a snubber.
1.2 Features and benefits
•
3Q technology for improved noise immunity
•
High commutation capability with maximum false trigger immunity
•
High voltage capability
•
Less sensitive gate for high noise immunity
•
Planar passivated for voltage ruggedness and reliability
•
Triggering in three quadrants only
•
Very high immunity to false turn-on by dV/dt
1.3 Applications
•
Electronic thermostats (heating and cooling)
•
High power motor controls e.g. washing machines and vacuum cleaners
•
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
2
-
35
mA
2
-
35
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
800
100
12
Unit
V
A
A
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NXP Semiconductors
BTA312-800C
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
2
Typ
-
Max
35
Unit
mA
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220AB (SOT78)
3. Ordering information
Table 3.
Ordering information
Package
Name
BTA312-800C
BTA312-800C/DG
TO-220AB
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
SOT78
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
mb
≤ 100 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
BTA312-800C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Conditions
Min
-
-
-
-
Max
800
12
100
110
Unit
V
A
A
A
Product data sheet
4 October 2012
2 / 11
NXP Semiconductors
BTA312-800C
3Q Hi-Com Triac
Symbol
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
15
I
T(RMS )
(A)
2
Parameter
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
Conditions
t
p
= 10 ms; SIN
I
T
= 20 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
Min
-
-
-
-
Max
50
100
2
5
0.5
150
125
003a a b687
Unit
A s
A/µs
A
W
W
°C
°C
2
over any 20 ms period
-
-40
-
003a a b686
50
I
T(RMS )
(A)
40
10
30
5
20
10
0
-50
0
50
100
150
T
mb
(°C)
0
10
-2
10
-1
1
10
s urge duration (s )
Fig. 1.
RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 100 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
003aab690
16
P
tot
(W)
12
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
8
4
0
0
3
6
9
I
T(RMS)
(A)
12
α = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
BTA312-800C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
3 / 11
NXP Semiconductors
BTA312-800C
3Q Hi-Com Triac
10
3
I
TSM
(A)
(1)
003aab806
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
I
TSM
(A)
100
80
60
40
20
0
120
Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aab809
I
T
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
full cycle;
Fig. 6
half cycle;
Fig. 6
in free air
Min
-
-
-
Typ
-
-
60
Max
1.5
2
-
Unit
K/W
K/W
K/W
R
th(j-a)
BTA312-800C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
4 / 11
NXP Semiconductors
BTA312-800C
3Q Hi-Com Triac
10
Z
th(j-mb)
(K/W)
1
(1)
003aab775
10
-1
(2)
10
-2
P
D
10
-3
10
-5
t
p
t
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
(1) Unidirectional (half cycle)
(2) Bidirectional (full cycle)
Fig. 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Symbol
I
GT
Characteristics
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 8
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 8
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 15 A; T
j
= 25 °C;
Fig. 10
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
I
D
BTA312-800C
Min
2
2
2
-
-
-
-
-
0.25
-
-
Typ
-
-
-
-
-
-
-
1.3
0.4
0.8
0.1
Max
35
35
35
50
60
50
35
1.6
-
1.5
0.5
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
Static characteristics
off-state current
V
D
= 800 V; T
j
= 125 °C
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
4 October 2012
5 / 11
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