BTA208B-1000C
Three-quadrant triacs high commutation
Rev. 01 — 5 December 2005
Product data sheet
1. Product profile
1.1 General description
Passivated high voltage, high commutation triac in a SOT404 surface mounted device,
plastic package. This triac is intended for use in motor control circuits where high blocking
voltage, high static and dynamic dV/dt as well as high dI/dt can occur. This device will
commutate the full rated RMS current at the maximum rated junction temperature without
the aid of a snubber.
1.2 Features
s
False trigger immunity
s
1000 V, V
DRM
guaranteed
1.3 Applications
s
Motor control
s
Reversible induction motors
1.4 Quick reference data
s
I
TSM
≤
65 A
s
V
DRM
≤
1000 V
s
I
T(RMS)
≤
8 A
s
I
GT
≤
35 mA
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
main terminal 1 (T1)
main terminal 2 (T2)
gate (G)
mounting base; main terminal 2
2
1
3
mb
T2
sym051
Simplified outline
Symbol
T1
G
SOT404 (D2PAK)
Philips Semiconductors
BTA208B-1000C
Three-quadrant triacs high commutation
3. Ordering information
Table 2:
Ordering information
Package
Name
BTA208B-1000C
D2PAK
Description
plastic single-ended surface mounted package; 3 leads (one lead
cropped)
Version
SOT404
Type number
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
full sine wave; T
mb
≤
102
°C;
see
Figure 4
and
5
full sine wave; T
j
= 25
°C
prior
to surge; see
Figure 2
and
3
t = 20 ms
t = 16.7 ms
I
2
t
dl
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
-
-
-
-
-
-
-
−40
-
65
71
21
100
2
5
0.5
+150
125
A
A
A
2
s
A/µs
A
W
W
°C
°C
Conditions
Min
-
-
Max
1000
8
Unit
V
A
BTA208B-1000C_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 5 December 2005
2 of 12
Philips Semiconductors
BTA208B-1000C
Three-quadrant triacs high commutation
12
P
tot
(W)
10
α
α
003aab162
α
= 180°
120°
90°
101
T
mb(max)
(°C)
105
8
60°
30°
109
6
113
4
117
2
121
0
0
2
4
6
8
I
T(RMS)
(A)
125
10
α
= conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
003aaa968
80
I
TSM
(A)
60
I
T
I
TSM
t
t
p
T
j
= 25
°C
max
40
20
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA208B-1000C_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 5 December 2005
3 of 12
Philips Semiconductors
BTA208B-1000C
Three-quadrant triacs high commutation
10
3
dl
T
/dt limit
I
TSM
(A)
I
T
003aab121
I
TSM
t
T
T
j(init)
= 25
°C
max
10
2
10
10
−2
10
−1
1
10
t
p
(ms)
10
2
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
003aaa970
25
I
T(RMS)
(A)
20
10
I
T(RMS)
(A)
8
003aab161
102
°C
15
6
10
4
5
2
0
10
−2
10
−1
1
10
surge duration (s)
0
-50
0
50
100T
mb
(°C) 150
f = 50 Hz; T
mb
≤
102
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BTA208B-1000C_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 5 December 2005
4 of 12
Philips Semiconductors
BTA208B-1000C
Three-quadrant triacs high commutation
5. Thermal characteristics
Table 4:
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
-
-
-
Typ
-
-
55
Max
2
2.4
-
Unit
K/W
K/W
K/W
thermal resistance from junction to full cycle; see
Figure 6
mounting base
half cycle; see
Figure 6
thermal resistance from junction to minimum footprint
ambient
10
Z
th(j-mb)
(K/W)
(1)
(2)
001aad582
1
10
−1
P
10
−2
t
p
t
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
(1) Unidirectional
(2) Bidirectional
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
BTA208B-1000C_1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 5 December 2005
5 of 12
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