MCP19035
High-Speed Synchronous Buck Controller
Features
• Input Voltage Range: from 4.5V to 30V
• Targeted for Low Voltage Power Trains with
Output Current up to 20A
• High-Speed Voltage Mode, Analog Pulse-Width
Modulation Control
• Power Good Output
• Internal Oscillator, Reference Voltage and
Overcurrent Limit threshold for Stand-Alone
Applications.
• Fixed Switching Frequency (f
SW
): 300 kHz
• Integrated Synchronous MOSFET Drivers
• Multiple Dead-Time Options
• Internal Blocking Device for Bootstrap Circuit
• Integrated Current Sense Capability for Short
Circuit Protection
• Internal Overtemperature Protection
• Under Voltage Lockout (UVLO)
• Integrated Linear Voltage Regulator
• 10-LD 3 X 3 mm DFN Package
General Description
The MCP19035 is an application-optimized, high-
speed synchronous buck controller that operates from
input voltage sources up to 30V. This controller
implements a voltage-mode control architecture with a
fixed switching frequency of 300 kHz. The high-
switching frequency facilitates the use of smaller
passive components, including the inductor and
input/output capacitors, allowing a compact, high-
performance power supply solution. The MCP19035
implements an adaptive anti-cross conduction scheme
to prevent shoot-through in the external power
MOSFETs. Further more, the MCP19035 offers
multiple dead-time options, enabling an additional
degree of optimization, allowing a higher efficiency
power supply design.
The MCP19035 controller is intended to be used for
applications providing up to 20A of output currents
across a wide input voltage range, up to 30V.
The SHDN input is used to turn the device on and off.
While turned off, the current consumption is minimized.
The MCP19035 offers a Power Good feature
(PWRGD), enabling fault detection and simplifying
sequencing.
Applications
•
•
•
•
•
Point of Loads
Set-Top Boxes
DSL Cable Modems
FPGA’s/DSP’s Power Supply
PC’s Graphic/Audio Cards
Package Types
MCP19035
3x3 DFN*
SHDN 1
FB 2
COMP 3
V
IN
4
PWRGD 5
EP
11
10 HDRV
9 PHASE
8 BOOT
7 LDRV
6 +V
CC
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2012 Microchip Technology Inc.
DS22326A-page 1
MCP19035
Typical Application
+V
IN
C
IN
ON
OFF
MCP19035
SHDN
BOOT
C
BOOT
V
IN
HDRV
L
PWRGD
PHASE
Q
2
+V
OUT
C
OUT
Q
1
COMP
LDRV
C
2
C
3
R
4
FB
GND
+V
CC
C
VCC
R
1
C
1
R
2
R
3
DS22326A-page 2
2012 Microchip Technology Inc.
MCP19035
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
V
IN
- V
GND
........................................................ -0.3V to +30V
V
BOOT
................................................................ -0.3V to +36V
VHDRV, HDRV Pin................. +V
PHASE
-0.3V to V
BOOT
+0.3V
VLDRV, LDRV Pin.....................+ (V
GND
-0.3V) to (V
CC
+0.3V)
Max. Voltage on Any Pin ...........+ (V
GND
-0.3V) to (V
CC
+0.3V)
Storage Temperature ....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins (HBM) .................................... 1 kV
ESD protection on all pins (MM) .....................................200V
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= 12V, F
SW
= 300 kHz, C
IN
= 1.0 µF, T
A
= +25°C (for typical
values), T
A
= -40°C to +125°C (for minimum and maximum).
Parameters
Inputs
Input Voltage Range
UVLO (V
IN
Rising)
UVLO (V
IN
Falling)
UVLO Hysteresis
Input Quiescent Current
Shutdown Current
V
IN
UVLO
ON
UVLO
OFF
UVLO
HYST
I(V
IN
)
I
IN_SHDN
4.5
4
3.4
—
—
—
—
4.2
3.6
600
6
25
30
4.4
3.8
—
8
50
V
V
V
mV
mA
µA
SHDN = GND.
Internal Voltage Regulator is
also disabled
6V
V
IN
< 30V
6.5V
V
IN
< 30V,
Note 2
V
IN
= 6V, R
LOAD
< 0.1
Note 1
Note 1
I
VCC_OUT
= 50 mA
f
1000 Hz,
I
VCC_OUT
= 50 mA
C
IN
= 0 µF,
C
VCC-OUT
= 4.7 µF,
Note 1
See
Section 4.4, Internal
Oscillator
Note 1
Symbol
Min
Typ
Max
Units
Conditions
Linear Regulator
Output Voltage
Output Current
Short-Circuit
Output Current
Load Regulation
Line Regulation
Dropout Voltage
Power Supply
Rejection Ratio
PSRR
V
CC
I
VCC-OUT
I
VCC-OUT_SC
4.875
50
—
—
—
—
—
5
—
—
0.1
0.05
0.75
70
100
—
—
1.3
—
5.125
V
mA
mA
%
%
V
dB
Internal Oscillator
Switching
Frequency
Ramp Signal Amplitude
Reference Voltage
Reference Voltage
Generator
Note 1:
2:
3:
V
REF
585
600
615
mV
F
SW
V
RAMP
255
0.9
300
1
345
1.1
kHz
V
PP
Ensured by design. Not production tested.
Limited by the maximum power dissipation of the case.
Possibility to be adjusted for high volumes.
2012 Microchip Technology Inc.
DS22326A-page 3
MCP19035
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= 12V, F
SW
= 300 kHz, C
IN
= 1.0 µF, T
A
= +25°C (for typical
values), T
A
= -40°C to +125°C (for minimum and maximum).
Parameters
Error Amplifier
Gain Bandwidth Product
Open Loop Gain
Input Offset Voltage
Input Bias Current
(FB Pin)
Error Amplifier
Sink Current
Error Amplifier
Source Current
PWM Section
Maximum Duty Cycle
Minimum ON time
Soft Start
Soft Start Time
Shutdown
Logic Low-to-High
Threshold
Logic High-to-Low
Threshold
Power Good
Power Good
Threshold High
Power Good
Threshold Low
Power Good
Threshold Hysteresis
Power Good Delay
Power Good Active
Time-Out Period
MOSFET Drivers
High-Side Driver Pull-up
Resistance
High-Side Driver Pull-
Down Resistance
Low-Side Driver Pull-Up
Resistance
Low-Side Driver Pull-
Down Resistance
HDRV Rise Time
HDRV Fall Time
LDRV Rise Time
Note 1:
2:
3:
R
HI-SOURCE
R
HI-SINK
R
LO-SOURCE
R
LO-SINK
t
RH
t
FH
t
RL
—
—
—
—
—
—
—
2
2
2
1
15
15
10
3.5
3.5
3.5
2.5
35
35
25
ns
ns
ns
V
BOOT
– V
PHASE
= 4.5V,
I
HDRV
= 100 mA,
Note 1
V
BOOT
– V
PHASE
= 4.5V,
I
HDRV
= 100 mA,
Note 1
V
CC
= 5V,
Note 1
V
CC
= 5V,
Note 1
C
LOAD
= 1.0 nF,
Note 1
C
LOAD
= 1.0 nF,
Note 1
C
LOAD
= 1.0 nF,
Note 1
PG
TH-H
PG
TH-LOW
PG
TH-HYS
t
PG-DELAY
t
PG-TIME-OUT
—
88
—
—
—
92
90
2
150
120
96
—
—
—
—
% of V
REF
% of V
REF
% of V
REF
us
ms
V
FB
= (PG
TH-HI
+ 100 mV) to
(PG
TH-LOW
– 100 mV)
V
FB
= (PG
TH-HI
– 100 mV) to
(PG
TH-HI
+ 100 mV)
SHDN
HI
SHDN
LO
0.75
—
—
—
—
0.4
V
V
4.5V
V
IN
< 30V
4.5V
V
IN
< 30V
t
SS
—
2.6
—
ms
DC
MAX
t
ON(MIN)
85
130
—
—
—
240
%
ns
Note 1
6V
V
IN
< 30V,
Note 1
GBP
A
OL
V
OS
I
BIAS
I
SINK
I
SOURCE
6.5
70
-5
—
—
—
10
80
0.1
—
5
5
—
—
5
5
—
—
MHz
dB
mV
nA
mA
mA
Note 1
Note 1
Note 1
Note 1
Note 1
Note 1
Symbol
Min
Typ
Max
Units
Conditions
Ensured by design. Not production tested.
Limited by the maximum power dissipation of the case.
Possibility to be adjusted for high volumes.
DS22326A-page 4
2012 Microchip Technology Inc.
MCP19035
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= 12V, F
SW
= 300 kHz, C
IN
= 1.0 µF, T
A
= +25°C (for typical
values), T
A
= -40°C to +125°C (for minimum and maximum).
Parameters
LDRV Fall Time
Dead Time
Symbol
t
FL
t
DT
Min
—
20
—
Short Circuit Protection
High-Side Over Current
Threshold Voltage
Low-Side Over Current
Threshold Voltage
Minimum Pulse Width
During Short Circuit
Off-Time Between
Restart Attempts (Hick-
Up Time)
Thermal Shutdown
Thermal Shutdown
Thermal Shutdown
Hysteresis
Note 1:
2:
3:
TSHD
TSHD_HYS
—
—
150
15
—
—
°C
°C
Note 1
Note 1
OC
TH-HI
OC
TH-LO
t
SS-MIN
t
SS-HT
430
130
—
30
480
180
800
60
530
230
—
—
mV
mV
ns
ms
Note 1,
V
CBOOT
= 5V
Note 1, Note 3
Note 1
Note 1
Typ
10
—
12
Max
25
—
—
Units
ns
ns
Conditions
C
LOAD
= 1.0 nF,
Note 1
Two Dead-Time options, See
Section 5.2.2, Dead Time
Selection, Note 1
Ensured by design. Not production tested.
Limited by the maximum power dissipation of the case.
Possibility to be adjusted for high volumes.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics:
Unless otherwise indicated, V
IN
= 6.0V to 30V, F
SW
= 300 kHz
Parameters
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 10L-3x3 DFN
JA
—
53.3
—
°C/W
Typical 4-Layer board with
interconnecting vias
T
A
T
J-MAX
T
A
T
A
-40
—
-40
-65
—
—
—
—
+125
+150
+125
+150
°C
°C
°C
°C
Sym
Min
Typ
Max
Units
Conditions
2012 Microchip Technology Inc.
DS22326A-page 5
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