1N3208 Series
Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
DESCRIPTION/FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Can be made to meet stringent military, aerospace and
other high reliability requirements
DO-203AB (DO-5)
RoHS
COMPLIANT
• RoHS compliant
PRODUCT SUMMARY
I
F(AV)
15 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
TEST CONDITIONS
VALUES
15
(1)
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
150
(1)
239
250
(1)
286
260
3870
50 to 600
- 65 to 175
UNITS
A
°C
A
A
2
s
A
2
√s
V
°C
I
FSM
I
2
t
I
2
√t
V
RRM
T
J
Note
(1)
JEDEC registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
CATHODE TO CASE
1N3208
1N3209
1N3210
1N3211
1N3212
1N3213
1N3214
Note
(1)
JEDEC registered values
ANODE TO CASE
1N3208R
1N3209R
1N3210R
1N3211R
1N3212R
1N3213R
1N3214R
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
T
J
= - 65 °C TO 175 °C
50
(1)
100
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
V
T
J
= - 65 °C TO 175 °C
50
(1)
100
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
Document Number: 93496
Revision: 24-Jun-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
1N3208 Series
Vishay High Power Products
Stud-Mounted
Silicon Rectifier Diodes, 15 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
TEST CONDITIONS
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Maximum peak one cycle
non-repetitive surge current
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
t = 10 ms
Maximum
I
2
t
for fusing
t = 8.3 ms
I
2
t
Maximum I
2
t for individual
device fusing
Maximum I
2
√t
for individual
device fusing
Maximum forward voltage drop
Maximum average reverse current
Notes
(1)
JEDEC registered values
(2)
I
2
t for time t = I
2
√t
x
√t
x
x
I
2
√t
(2)
V
FM
I
R(AV)
t = 10 ms
t = 8.3 ms
VALUES
15
(1)
150
(1)
Following any rated load
condition and with rated
V
RRM
applied
Following any rated load
condition and with V
RRM
applied following surge = 0
With rated V
RRM
applied
following surge,
initial T
J
= 150 °C
With V
RRM
= 0 following
surge, initial T
J
= 150 °C
239
250
(1)
A
284
297
286
260
A
2
s
403
368
3870
1.5
(1)
10
(1)
A
2
√s
V
mA
UNITS
A
°C
I
FSM
t = 0.1 to 10 ms, V
RRM
= 0 following surge
I
F(AV)
= 15 A (47.1 A peak), T
C
= 150 °C
Maximum rated I
F(AV)
and T
C
= 150 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
Mounting torque
minimum
maximum
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
TEST CONDITIONS
VALUES
- 65 to 175
(1)
0.65
°C/W
0.25
2.3 (20)
3.5 (30)
28.5
1
JEDEC
N·m
(lbf · in)
g
oz.
UNITS
°C
Weight
Case style
Note
(1)
JEDEC registered values
DO-203AB (DO-5)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93496
Revision: 24-Jun-08
1N3208 Series
Stud-Mounted
Vishay High Power Products
Silicon Rectifier Diodes, 15 A
35
120
60°
180°
120°
DC
Average Forward Current
Over Full Cycle (A)
30
Ø
Average Forward Power Loss
Over Full Cycle (W)
100
90
80
70
60
50
40
30
20
10
0
0
10
20
30
25
20
180°
15
120°
10
5
0
110
60°
DC
Conduction period
T
J
= 140 °C
Ø
Conduction period
120
130
140
150
160
170
180
40
50
60
70
80
90
Maximum Allowable Case Temperature (°C)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
250
Average Forward Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
10
5
Average Forward Power Loss
Over Full Cycle (W)
At any rated load condition and
with
rated
V
RRM
following surge
Peak Half Sine Wave
Forward Current (A)
200
10
4
120°
180°
150
50 Hz
60 Hz
10
3
60°
T
J
= 140 °C
DC
10
2
Ø
100
Conduction period
10
10
10
2
10
3
10
4
1
2
4
6
8
10
20
40 60
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
Average Forward Current Over Full Cycle (A)
Fig. 4 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Instantaneous Forward Current (A)
10
3
10
2
T
J
= 140 °C
10
T
J
= 25 °C
1
0
1
2
3
4
5
6
7
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Forward Voltage vs. Forward Current
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 93496
Revision: 24-Jun-08
http://www.vishay.com/doc?95360
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
分立器件
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
