70HFL SERIES
100 V – 1000 V, 70 Amp
Fast Recovery Diode
Features:
•
•
•
•
•
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Stud cathode and stud anode versions
ELECTRICAL CHARACTERISTICS AND RATINGS
PARAMETER
Max. Average forward current @ 75 ºC
Max. peak one cycle (non-rep) surge
current 10 msec
Max I
2
t for fusing
Max I
2
t for fusing
Trr range
Vrrm range
TJ range
SYMBOL
I
F(AV)
I
FSM
50 Hz
I
FSM
60 Hz
I
2
t 50Hz
I
2
t 60Hz
I
2
t
Trr
Vrrm
TJ
VALUE
70
700
730
2450
2240
34,650
See table
100 to 1000
-40 to 125
UNITS
A
A
A
2
s
I
2
s
V
ns
°C
PART NUMBER
V
RRM
Max. Peak
Repetitive
Reverse Voltage
TJ = -40 to 125ºC
V
100
200
400
600
800
1000
V
RSM
Max. Peak
Non-repetitive
reverse Voltage
TJ = -40 to 125ºC
V
150
300
500
700
900
1100
I
FM/
Max.peak
reverse current at
rated VRRM
T
J
=
25°C
mA
T
J
=
125°C
mA
70HFL*10S02, 70HFL*10S05, 70HFL*10S10
70HFL*20S02, 70HFL*20S05, 70HFL*20S10
70HFL*40S02, 70HFL*40S05, 70HFL*40S10
70HFL*60S02, 70HFL*60S05, 70HFL*60S10
70HFL*80S02, 70HFL*80S05, 70HFL*80S10
70HFL*100S02, 70HFL*100S05, 70HFL*100S10
0.1
15
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70HFL SERIES
REVERSE RECOVERY CHARACTERISTICS
PARAMETER
Max. Reverse Recovery time
SYMBOL
T
RR
S02
60
200
Max. Reverse Recovered
charge
FORWAR CONDUCTION
Parameter
Max. average forward current @75ºC
Max. RMS forward current
Max. Peak repetitive forward current
Symbol
I
F(AV)
I
F(RMS)
I
FRM
Value
70
110
380
700
Max. peak one cycle non-repetitive
forward current
I
FSM
830
2450
Max. I
2
t for fusing
I
2
t
3460
Max. I
2
t for fusing
note 1
Max value of threshold voltage
Low level value of forward slope
resistance
Max. peak forward voltage
1. I
2
t for time tx = I
2
t* x
I
2
t
V
F(TO)
rF
V
FM
34650
1.085
3.40
1.85
A
2
s
V
mΩ
V
A
2
s
A
Units
A
A
Conditions
180°C conduction, half sine wave
Sinusoidal half-wave 30º conduction
Sinusoidal half-wave
100% VRRM
Reapplied initial
TJ= TJ max.
t=10ms
Sinusoidal half-wave
No voltage
Reapplied initial
TJ= TJ max
100% VRRM
Reapplied initial
TJ= TJ max
t=10ms
No voltage
Reapplied initial
TJ= TJ max
t= 0.1 to 10ms. No voltage reapplied
TJ= 125ºC.
TJ = 25ºC, IFM = π x I
F(AV
Q
RR
S02
90
240
VALUE
S05
150
500
S05
500
1300
UNITS
S10
290
1000
S10
1600
6000
ns
ns
nc
nc
CONDITIONS
TJ=25C , IF=1A,to Vr=30V,
-dif/dt = 100 A/us
TJ=25C, -dif/dt = 25 A/us
IFM = π x rated I
F(AV)
TJ=25C , IF=1A,to Vr=30V,
-dif/dt = 100 A/us
TJ=25C, -dif/dt = 25 A/us
IFM = π x rated I
F(AV)
INFO
@
DEANTECHNOLOGY
.
COM
WWW
.
DEANTECHNOLOGY
.
COM
+1.972.248.7691
V
ERSION
: 3.0
E
FFECTIVE
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UGUST
2015
Page 2 of 3
70HFL SERIES
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction Operating temperature range
Storage temperature range
Max. internal Thermal resistance junction to
case
Max thermal resistance case to heatsink
Mounting torque 10%
To nut
T
SYMBOL
T
J
T
STG
RthJC
RthCS
VALUE
-40 to 125
-40 to 150
0.36
0.25
20 (27)
0.23 (0.29)
2.2 (2.7)
22
0.25
2.5
25 (0.88)
(DO-5)
UNITS
ºC
ºC
KW
KW
Lbf. in
Kgf.m
n.m
Lbf. in
Kgf.m
n.m
G (oz)
CONDITIONS
DC Operation
Mounting surface
smooth, flat & greased
Lubricated threads
(non-lubricated
threads)
To device
Approx. Weight
outline
Wt
OUTLINE AND DIMENSIONS
70
1
HFL
2
R
3
100
4
1 – 70 = Series Device
2 – HFL = Fast Recovery Diode
3 – None = Normal Polarity
R = Reverse Polarity
4 – Voltage Code x 10 = V
RRM
INFO
@
DEANTECHNOLOGY
.
COM
WWW
.
DEANTECHNOLOGY
.
COM
+1.972.248.7691
V
ERSION
: 3.0
E
FFECTIVE
: 04 A
UGUST
2015
Page 3 of 3
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