UNISONIC TECHNOLOGIES CO., LTD
6N65
6.2A, 650V N-CHANNEL
POWER MOSFET
1
TO-251
1
TO-220
Power MOSFET
DESCRIPTION
The UTC
6N65
is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
1
TO-220F
1
TO-220F1
FEATURES
* R
DS(ON)
= 1.7Ω @V
GS
= 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
1
TO-252
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
6N65L-TA3-T
6N65G-TA3-T
TO-220
6N65L-TF1-T
6N65G-TF1-T
TO-220F1
6N65L-TF3-T
6N65G-TF3-T
TO-220F
6N65L-TM3-T
6N65G-TM3-T
TO-251
6N65L-TN3-R
6N65G-TN3-R
TO-252
6N65L-TN3-T
6N65G-TN3-T
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
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1 of 6
QW-R502-589.B
6N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
6.2
A
Continuous Drain Current
I
D
6.2
A
Pulsed Drain Current (Note 2)
I
DM
24.8
A
440
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125
W
Power Dissipation
TO-220F/TO-220F1
P
D
40
W
TO-251/TO-252
55
W
Junction Temperature
T
J
+150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L = 14mH, I
AS
= 6A, V
DD
= 90V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
6.2A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient TO-220F/TO-220F1
TO-251/TO-252
TO-220
Junction to Case
TO-220F/TO-220F1
TO-251/TO-252
SYMBOL
θ
JA
RATING
62.5
62.5
110
1.0
3.2
2.27
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θ
JC
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2 of 6
QW-R502-589.B
6N65
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
100 nA
Forward
V
GS
= 30V, V
DS
= 0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/△T
J
I
D
=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 3.1A
1.1 1.7
Ω
DYNAMIC CHARACTERISTICS
770 1000 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
95 120 pF
f=1.0 MHz
Reverse Transfer Capacitance
C
RSS
10
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
20
50
ns
Turn-On Rise Time
t
R
70 150 ns
V
DD
=325V, I
D
=6.2A,
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
40
90
ns
Turn-Off Fall Time
t
F
45 100 ns
Total Gate Charge
Q
G
20
25
nC
V
DS
=520V, I
D
=6.2A,
Gate-Source Charge
Q
GS
4.9
nC
V
GS
=10V (Note 1, 2)
Gate-Drain Charge
Q
GD
9.4
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 6.2 A
1.4
V
Maximum Continuous Drain-Source Diode
I
S
6.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
24.8 A
Forward Current
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
S
= 6.2 A,
290
ns
dI
F
/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Q
RR
2.35
μC
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
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QW-R502-589.B
6N65
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
V
DS
-
+
-
L
Power MOSFET
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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4 of 6
QW-R502-589.B
6N65
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Switching Test Circuit
Switching Waveforms
Gate Charge Test Circuit
Gate Charge Waveform
BV
DSS
I
AS
I
D(t)
V
DD
V
DS(t)
t
p
Unclamped Inductive Switching Test Circuit
Time
Unclamped Inductive Switching Waveforms
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QW-R502-589.B
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