HIGH VOLTAGE SILICON RECTIFIER
1N4148
FEATURES
Silicon
Epitaxial Planar Diode
Fast
switching diode
This
diode is also available in other
case styles including: the SOD-123
case with the type designation
1N4448W, the MiniMELF case with the
type designation LL4448, and the SOT23
case with the type designation
MECHANICAL DATA
Case:
DO-35
Weight:
apprax: 0.13gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25 ambient temperature unless otherwise specified
Symbol
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25 °C and f
≥
50 Hz
Surge Forward Current at t < 1 s and T
j
= 25 °C
Power Dissipation at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
75
100
150
1)
Unit
V
V
mA
V
R
V
RM
I
0
I
FSM
P
tot
T
j
T
S
500
500
1)
175
–65 to +175
mA
mW
°C
°C
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
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HIGH VOLTAGE SILICON RECTIFIER
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Forward Voltage
at I
F
= 10 mA
Leakage Current
at V
R
= 20 V
at V
R
= 75 V
at V
R
= 20 V, T
j
= 150 °C
Capacitance
at V
F
= V
R
= 0 V
Voltage Rise when Switching ON
tested with 50 mA Pulses
t
p
= 0.1
µs,
Rise Time < 30 ns, f
p
= 5 to 100 kHz
Reverse Recovery Time
from I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, V
RF
= 2 V
1)
Min.
–
Typ.
–
Max.
1
Unit
V
V
F
I
R
I
R
I
R
C
tot
V
fr
–
–
–
–
–
–
–
–
–
–
25
5
50
4
2.5
nA
µA
µA
pF
V
t
rr
–
–
4
ns
R
thJA
η
v
–
0.45
–
–
350
1)
–
K/W
–
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
Rectification Efficiency Measurement Circuit
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