1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Switching diode
1N4531 / 1N4148 / 1N4150 / 1N4448
∗This
product is available only outside of Japan.
Application
High-speed switching
External dimensions
(Units : mm)
1N4531
CATHODE BAND (BLACK)
Type No.
φ
0.5
±
0.1
Features
1) Glass sealed envelope. (MSD, GSD)
2) High speed.
3) High reliability.
C
29
±1
2.7
±
0.3
29
±1
A
φ
1.8
±
0.2
ROHM : MSD
EIAJ :
−
JEDEC : DO-34
1N4148 / 1N4150 / 1N4448
CATHODE BAND (BLACK)
Type No.
φ
0.5
±
0.1
Construction
Silicon epitaxial planar
C
29
±1
3.8
±
0.2
29
±1
A
φ
1.8
±
0.2
ROHM : GSD
EIAJ :
−
JEDEC : DO-35
Absolute maximum ratings
(Ta = 25°C)
Type
1N4531
1N4148
1N4150
1N4448
V
RM
(V)
100
100
50
100
V
R
(V)
75
75
50
75
I
FM
(mA)
450
450
600
450
I
O
(mA)
150
150
200
150
I
F
(mA)
200
200
250
200
I
FSM
1µs
(A)
2
2
4
2
P
(mW)
500
500
500
500
Tj
(
°C
)
200
200
200
200
Topr
(
°C
)
−65
~
+200
−65
~
+200
−65
~
+200
−65
~
+200
Tstg
(
°C
)
−65
~
+200
−65
~
+200
−65
~
+200
−65
~
+200
Electrical characteristics
(Ta = 25°C)
V
F
(V)
Type
@
@
@
1mA
BV (V) Min.
@
30mA
I
R
(µA) Max.
@25
°C
V
R
(V)
0.025
5.0
0.025
5.0
0.1
0.025
5.0
20
75
20
75
50
20
75
@
2mA
@
5mA
@
10mA
@
20mA
@
50mA
@
@
@
0.1mA 0.25mA
100mA 200mA 250mA
@
5µA
75
@
100µA
100
t
rr
(ns)
V
R
=6V
@150
°C
V
R
=0
I
F
=10mA
f=1MHz R
L
=100Ω
V
R
(V)
C
r
(pF)
20
4
4
1N4531
1.0
1N4148
0.54
1N4150
0.62
0.62
1N4448
0.72
1.0
0.74
0.86
0.92
1.0
1.0
0.66
0.76
0.82
0.87
50.0
75
−
−
100
50.0
20
4
4
50
100.0
50
2.5
4
100
50.0
20
4
4
The upper figure is the minimum V
F
and the lower figure is the maximum V
F
value.
1N4531 / 1N4148 / 1N4150 / 1N4448
Diodes
Electrical characteristic curves
(Ta = 25°C)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
100
50
3.0
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
0
FORWARD CURRENT : I
F
(mA)
3000
REVERSE CURRENT : I
R
(nA)
100°C
20
10
5
2
Ta
=2
5
°C
Ta
=−
25
°C
25
°
C
Ta
=
75
°C
1000
300
100
30
10
3
70°C
50°C
1
0.5
0.2
0
Ta=25°C
0.2
Ta
=
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100 120
5
10
15
20
25
30
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between
terminals characteristics
3
100
REVERSE RECOVERY TIME : t
rr
(ns)
SURGE CURRENT : I
surge (
A)
V
R
=
6V
I
rr
=
1/10I
R
2
50
PULSE
Single pulse
20
10
5
1
2
0
0
10
20
30
1
0.1
1
10
100
1000
10000
FORWARD CURRENT : I
F
(mA)
PULSE WIDTH : Tw (ms)
Fig. 4 Reverse recovery time
characteristics
Fig. 5 Surge current characteristics
0.01µF
D.U.T.
5Ω
PULSE GENERATOR
OUTPUT 50Ω
50Ω
SAMPLING
OSCILLOSCOPE
INPUT
100ns
OUTPUT
t
rr
0
0.1I
R
Fig. 6 Reverse recovery time (t
rr
) measurement circuit
I
R
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