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1N4150W-V_12

产品描述Small Signal Switching Diode
文件大小50KB,共3页
制造商Vishay(威世)
官网地址http://www.vishay.com
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1N4150W-V_12概述

Small Signal Switching Diode

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1N4150W-V
Vishay Semiconductors
Small Signal Switching Diode
Features
• Silicon Epitaxial Planar Diode
• For general purpose and switching
• This diode is also available in other case
styles including the DO-35 case with the
type designation 1N4150, and the
MiniMELF case with the type designation
LL4150.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17431
Mechanical Data
Case:
SOD-123
Weight:
approx. 9.3 mg
Packaging codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4150W-V
Ordering code
1N4150W-V-GS18 or 1N4150W-V-GS08
Marking
A4
Remarks
Tape and reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Peak reverse voltage
Maximum average forward
rectified current
Maximum power dissipation
1)
Test condition
Symbol
V
RM
I
F(AV)
P
tot
Value
50
200
410
1)
Unit
V
mA
mW
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum junction temperature
Storage temperature range
Test condition
Symbol
T
j
T
S
Value
150
- 65 to + 150
Unit
°C
°C
Document Number 85720
Rev. 1.3, 17-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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