1N4447 — Small Signal Diode
August 2011
1N4447
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
100
200
1.0
4.0
-65 to +200
175
Units
V
mA
A
A
°C
°C
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
300
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
C
T
t
rr
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Test Conditions
I
R
= 100μA
I
R
= 5.0μA
I
F
= 20mA
V
R
= 20V
V
R
= 20V, T
A
= 150°C
V
R
= 0, f = 1.0MHz
Min.
100
75
Max.
Units
V
V
1.0
25
50
2.0
4.0
V
nA
μA
pF
ns
Reverse Recovery Time I
F
= 10mA, V
R
= 6.0V
I
rr
= 1.0mA, R
L
= 100Ω
© 2011 Fairchild Semiconductor Corporation
1N4447 Rev. A0
1
www.fairchildsemi.com
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I56
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