NGTB50N60FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
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•
•
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
T
Jmax
= 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
5
ms
Short−Circuit Capability
This is a Pb−Free Device
50 A, 600 V
V
CEsat
= 1.80 V
E
OFF
= 0.46 mJ
C
Typical Applications
•
Solar Inverters
•
Uninterruptible Power Supplies (UPS)
•
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Collector−emitter voltage
Collector current
@ T
C
= 25°C
@ T
C
= 100°C
Diode Forward Current
@ T
C
= 25°C
@ T
C
= 100°C
Diode Pulsed Current
T
PULSE
Limited by T
J
Max
Pulsed collector current, T
pulse
limited by T
Jmax
Short−circuit withstand time
V
GE
= 15 V, V
CE
= 400 V,
T
J
≤
+150°C
Gate−emitter voltage
Transient gate−emitter voltage
(T
PULSE
= 5
ms,
D < 0.10)
Power Dissipation
@ T
C
= 25°C
@ T
C
= 100°C
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
P
D
417
208
T
J
T
stg
T
SLD
−55 to +175
−55 to +175
260
°C
°C
°C
Symbol
V
CES
I
C
100
50
I
F
100
50
I
FM
I
CM
t
SC
200
200
5
A
A
ms
A
Value
600
Unit
V
A
G
C
E
G
E
TO−247
CASE 340AL
MARKING DIAGRAM
50N60FL2
AYWWG
V
GE
$20
$30
V
V
W
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB50N60FL2WG
Package
TO−247
(Pb−Free)
Shipping
30 Units / Rail
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2016
1
December, 2016 − Rev. 5
Publication Order Number:
NGTB50N60FL2W/D
NGTB50N60FL2WG
THERMAL CHARACTERISTICS
Rating
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
Symbol
R
qJC
R
qJC
R
qJA
Value
0.36
0.60
40
Unit
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−
emitter short−circuited
Gate leakage current, collector−emitter
short−circuited
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GE
= 0 V, I
F
= 50 A
V
GE
= 0 V, I
F
= 50 A, T
J
= 175°C
T
J
= 25°C
I
F
= 50 A, V
R
= 400 V
di
F
/dt = 200 A/ms
T
J
= 175°C
I
F
= 50 A, V
R
= 400 V
di
F
/dt = 200 A/ms
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
−
−
−
−
−
−
−
−
2.10
2.20
94
0.45
8
170
1.40
13
2.90
−
−
−
−
−
−
−
V
ns
mC
A
ns
mC
A
T
J
= 150°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10
W
V
GE
= 0 V/ 15 V
T
J
= 25°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10
W
V
GE
= 0 V/ 15 V
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
47
237
67
1.50
0.46
1.96
90
49
245
96
1.90
0.83
2.73
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mJ
ns
mJ
ns
V
CE
= 480 V, I
C
= 50 A, V
GE
= 15 V
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
−
−
−
−
−
−
5328
252
148
220
52
116
−
−
−
−
−
−
nC
pF
V
GE
=
0 V, I
C
= 500
mA
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 50 A, T
J
= 175°C
V
GE
= V
CE
, I
C
= 350
mA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J =
150°C
V
GE
= 20 V , V
CE
= 0 V
V
(BR)CES
V
CEsat
V
GE(th)
I
CES
I
GES
600
1.50
−
4.5
−
−
−
−
1.80
2.19
5.5
−
−
−
−
2.00
−
6.5
0.5
4.0
200
V
V
V
mA
nA
Test Conditions
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
160
I
C
, COLLECTOR CURRENT (A)
13 V
I
C
, COLLECTOR CURRENT (A)
140
120
100
80
11 V
60
40
20
0
0
1
2
3
4
7V
10 V
9V
8V
5
6
7
8
V
GE
= 15 V
to 20 V
T
J
= 25°C
140
120
100
80
60
40
9V
20
0
0
1
2
3
4
5
6
8V
7V
7
8
11 V
10 V
160
T
J
= 150°C
15 V
V
GE
= 17 V
to 20 V
13 V
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
160
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
140
120
100
80
11 V
60
40
20
0
0
1
2
3
4
5
7V
10 V
9V
8V
6
7
8
V
GE
= 20 V
to 15 V
13 V
T
J
= −55°C
160
140
120
100
80
60
40
20
0
0
2
Figure 2. Output Characteristics
T
J
= 25°C
T
J
= 150°C
4
6
8
10
12
14
16
18
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
3.00
I
C
= 75 A
2.50
I
C
= 50 A
2.00
1.50
1.00
0.50
0
−75 −50 −25
10
I
C
= 25 A
C, CAPACITANCE (pF)
10,000
Figure 4. Typical Transfer Characteristics
C
ies
1000
C
oes
100
C
res
T
J
= 25°C
0
10
20
30
40
50
60
70
80
90 100
0
25
50
75 100 125 150 175 200
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
Figure 6. Typical Capacitance
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NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
70
V
GE
, GATE−EMITTER VOLTAGE (V)
I
F
, FORWARD CURRENT (A)
60
50
40
30
20
T
J
= 150°C
10
0
0
0.5
1.0
T
J
= 25°C
1.5
2.0
2.5
3.0
3.5
4.0
16
14
12
10
8
6
4
2
0
0
50
100
150
Q
G
, GATE CHARGE (nC)
V
CE
= 480 V
V
GE
= 15 V
I
C
= 50 A
200
V
F
, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
3.0
V
CE
= 400 V
V
GE
= 15 V
2.5
I
C
= 50 A
Rg = 10
W
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
T
J
, JUNCTION TEMPERATURE (°C)
E
off
1000
SWITCHING LOSS (mJ)
E
on
SWITCHING TIME (ns)
t
d(off)
100
t
f
t
d(on)
t
r
10
0
20
40
60
80
100
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
Rg = 10
W
120
140
160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
6
5
SWITCHING LOSS (mJ)
4
3
E
off
2
1
0
15
25
35
45
55
65
75
85
95
105
I
C
, COLLECTOR CURRENT (A)
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
1000
E
on
SWITCHING TIME (ns)
t
d(off)
t
f
100 t
d(on)
t
r
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10
W
25
35
45
55
65
75
85
95
105
10
15
I
C
, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. I
C
Figure 12. Switching Time vs. I
C
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NGTB50N60FL2WG
TYPICAL CHARACTERISTICS
10,000
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 50 A
E
on
8
6
4
2
0
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
10
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
E
off
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
I
C
= 50 A
1000
t
d(off)
100
t
d(on)
t
r
t
f
14
12
SWITCHING LOSS (mJ)
10
Figure 13. Switching Loss vs. Rg
SWITCHING TIME (ns)
Figure 14. Switching Time vs. Rg
6
5
SWITCHING LOSS (mJ)
4
3
2
1
0
150 200 250 300
E
off
V
GE
= 15 V
T
J
= 150°C
I
C
= 75 A
Rg = 10
W
1000
SWITCHING TIME (ns)
E
on
t
d(off)
t
d(on)
100
t
f
t
r
V
GE
= 15 V
T
J
= 150°C
I
C
= 75 A
Rg = 10
W
150 200 250 300 350 400 450 500 550 600 650
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
10
350 400
450 500 550 600 650
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. V
CE
1000
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
1000
Figure 16. Switching Time vs. V
CE
100
dc operation
10
100
ms
1
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
1
10
100
1 ms
50
ms
100
10
0.1
V
GE
= 15 V, T
C
= 125°C
1000
1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
Figure 18. Reverse Bias Safe Operating Area
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