Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C, unless otherwise specified)
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
PP
C
J
DC
Parameter
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
Diode Capacitance Matching
(Note 2)
I
T
= 1 mA (Note 3)
V
RWM
= 24 V
I
PP
= 1 A (8 x 20
ms
Waveform)
(Note 4)
I
PP
= 3 A (8 x 20
ms
Waveform)
(Note 4)
8 x 20
ms
Waveform (Note 4)
V
R
= 0 V, f = 1 MHz (Line to GND)
V
R
= 0 V, 5 MHz (Note 5)
Test Conditions
Min
24
26.2
−
−
−
−
−
−
Typ
−
−
15
33.4
44
−
−
0.26
Max
−
32
100
36.6
50
3.0
10
2
Unit
V
V
nA
V
V
A
pF
%
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
5.
DC
is the percentage difference between C
J
of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Device
SZNUP2242WTT1G
SZNUP2242WTT3G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
SZNUP2242
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
110
% OF PEAK PULSE CURRENT
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
t, TIME (ms)
20
25
30
t
d
= I
PP
/2
c−t
WAVEFORM
PARAMETERS
t
r
= 8
ms
t
d
= 20
ms
I
PP
, PEAK PULSE CURRENT (A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
35
40
45
50
V
C
, CLAMPING VOLTAGE (V)
Figure 1. Pulse Waveform, 8
×
20
ms
9
8
C, CAPACITANCE (pF)
125°C
7
6
5
4
3
2
0
5
10
15
20
25
I
T
, (mA)
25°C
Figure 2. Clamping Voltage vs Peak Pulse Current
50
45
40
35
30
25
20
15
10
5
0
20
22
T
A
= −55°C
24
26
28
30
32
34
25°C
65°C
125°C
V
R
, REVERSE VOLTAGE (V)
V
BR
, VOLTAGE (V)
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
25
V
R
, REVERSE BIAS VOLTAGE (V)
−55°C
20
+25°C
T
A
= +150°C
PERCENT DERATING (%)
100
80
60
40
20
0
−60
120
Figure 4. V
BR
versus I
T
Characteristics
15
10
5
0
0
1
2
3
I
L
, LEAKAGE CURRENT (nA)
4
5
−30
0
30
60
90
TEMPERATURE (°C)
120
150 180
Figure 5. I
R
versus Temperature Characteristics
Figure 6. Temperature Power Dissipation Derating
www.onsemi.com
3
SZNUP2242
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
H
E
1
2
E
b
e
A
0.05 (0.002)
A2
L
c
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
STYLE 4:
PIN 1.
2.
3.
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
CATHODE
CATHODE
ANODE
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Honeywell and SDS are registered trademarks of Honeywell International Inc.
DeviceNet is a trademark of Rockwell Automation.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
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Email:
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USA/Canada
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Order Literature:
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For additional information, please contact your local
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