1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Power Silicon Rectifier Diodes,
35 A, 40 A, 60 A
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military,
aerospace, and other high reliability
requirements
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-203AB (DO-5)
PRODUCT SUMMARY
I
F(AV)
35 A, 40 A, 60 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
I
2
t
V
RRM
TEST CONDITIONS
T
C
50 Hz
60 Hz
50 Hz
60 Hz
Range
1N1183
35
(1)
140
(1)
480
500
(1)
1140
1040
16 100
50 to 600
(1)
1N3765
35
(1)
140
(1)
380
400
(1)
730
670
10 300
700 to 1000
(1)
1N1183A
40
(1)
150
(1)
765
800
(1)
2900
2650
41 000
50 to 600
(1)
1N2128A
60
(1)
140
(1)
860
900
(1)
3700
3400
52 500
50 to 600
(1)
UNITS
A
°C
A
A
2
s
A
2
s
V
Note
(1)
JEDEC registered values
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
1N1183
1N1184
1N1185
1N1186
1N1187
1N1188
1N1189
1N1190
1N3765
1N3766
1N3767
1N3768
1N1183A
1N1184A
1N1185A
1N1186A
1N1187A
1N1188A
1N1189A
1N1190A
1N2128A
1N2129A
1N2130A
1N2131A
1N2133A
1N2135A
1N2137A
1N2138A
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
(T
J
= - 65 °C TO 200 °C
(2)
)
V
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
V
RM
, MAXIMUM DIRECT
REVERSE VOLTAGE
(T
J
= - 65 °C TO 200 °C
(2)
)
V
50
(1)
100
(1)
150
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
700
(1)
800
(1)
900
(1)
1000
(1)
Notes
(1)
JEDEC registered values
(2)
For 1N1183 Series and 1N3765 Series T = - 65 °C to 190 °C
C
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA
Revision: 04-Dec-12
Document Number: 93492
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
TEST CONDITIONS
1-phase operation,
180° sinusoidal conduction
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
Half cycle 50 Hz
sine wave or 6 ms
rectangular pulse
Half cycle 60 Hz
sine wave or 5 ms
rectangular pulse
t = 10 ms
Maximum I
2
t for fusing
t = 8.3 ms
I
2
t
Maximum I
2
t for individual
device fusing
Maximum I
2
t
for individual
device fusing
Maximum peak forward voltage
at maximum forward current (I
FM
)
V
RRM
= 700
V
RRM
= 800
Maximum average
reverse current
V
RRM
= 900
V
RRM
= 1000
Maximum rated I
F(AV)
, V
RRM
and T
C
Notes
(1)
JEDEC registered values
(2)
I
2
t for time t = I
2
t
x
t
x
x
I
R(AV)
Maximum rated I
F(AV)
and T
C
I
2
t
(2)
V
FM
t = 10 ms
t = 8.3 ms
Following any
rated load
condition and
with rated
V
RRM
applied
Following any
rated load
condition and
with ½ V
RRM
applied following
surge = 0
With rated V
RRM
applied following
surge, initial
T
J
= T
J
maximum
With V
RRM
= 0
following surge,
initial
T
J
= T
J
maximum
1N1183
35
(1)
140
(1)
480
1N3765 1N1183A 1N2128A UNITS
35
(1)
140
(1)
380
40
(1)
150
(1)
765
60
(1)
140
(1)
860
A
°C
500
(1)
400
(1)
800
(1)
900
(1)
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
570
455
910
1000
595
1140
1040
1610
1470
16 100
1.7
(1)
475
730
670
1030
940
10 300
1.8
(1)
110
5.0
(1)
4.0
(1)
3.0
(1)
2.0
(1)
-
950
2900
2650
4150
3750
41 500
1.3
(1)
126
-
-
-
-
2.5
(1)
1050
3700
3400
A
2
s
5250
4750
52 500
1.3
(1)
188
-
-
-
-
10
(1)
mA
A
2
s
V
A
t = 0.1 to 10 ms,
V
RRM
= 0 following surge
T
J
= 25 °C
110
-
-
-
-
10
(1)
Revision: 04-Dec-12
Document Number: 93492
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating
case temperature range
Maximum storage
temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
Maximum allowable
mounting torque
(+ 0 %, - 10 %)
SYMBOL
T
C
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(2)
Lubricated thread, tighting on nut
(2)
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
(3)
Approximate weight
Case style
JEDEC
(3)
TEST CONDITIONS
1N1183 1N3765 1N1183A 1N2128A UNITS
- 65 to 190
(1)
- 65 to 175
1.00
(1)
(1)
- 65 to 200
°C
- 65 to 200
1.1
(1)
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
17
0.6
g
oz.
N·m
(lbf · in)
0.65
(1)
°C/W
DO-203AB (DO-5)
Notes
(1)
JEDEC registered values
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N1183 and 1N3765 Series
Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Revision: 04-Dec-12
Document Number: 93492
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Fig. 3 - Typical High Level Forward Power Loss vs.
Average Forward Current (Sinusoidal Current Waveform),
1N1183 and 1N3765 Series
Fig. 6 - Average Forward Current vs. Maximum Allowable Case
Temperature, 1N1183A Series
Fig. 4 - Typical Forward Voltage vs. Forward Current,
1N1183 and 1N3765 Series
Fig. 7 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Fig. 5 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183 and 1N3765 Series
Fig. 8 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N1183A Series
Revision: 04-Dec-12
Document Number: 93492
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N1183, 1N3765, 1N1183A, 1N2128A Series
www.vishay.com
Vishay Semiconductors
Fig. 9 - Maximum Forward Voltage vs. Forward Current,
1N1183A Series
Fig. 12 - Maximum Allowable Case Temperature vs.
Average Forward Current, 1N2128A Series
Fig. 10 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N1183A Series
Fig. 13 - Maximum Low Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Fig. 11 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N2128A Series
Revision: 04-Dec-12
Fig. 14 - Maximum High Level Forward Power Loss vs.
Average Forward Current, 1N2128A Series
Document Number: 93492
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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