1N4006: 产品描述1 A, 800 V, SILICON, SIGNAL DIODE, DO-41; 产品类别半导体分立半导体; 文件大小60KB，共2页; 制造商Tiger Electronic Co.,Ltd.; 官网地址http://www.tgselec.com/

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1N4006在线购买

供应商	器件名称	价格	最低购买	库存
	1N4006	-	-	点击查看	点击购买

1N4006概述

1 A, 800 V, SILICON, SIGNAL DIODE, DO-41

1 A, 800 V, 硅, 信号二极管, DO-41

1N4006规格参数

参数名称	属性值
端子数量	2
元件数量	1
加工封装描述	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
状态	ACTIVE
包装形状	ROUND
包装尺寸	LONG FORM
端子形式	WIRE
端子涂层	NOT SPECIFIED
端子位置	AXIAL
包装材料	PLASTIC/EPOXY
结构	SINGLE
壳体连接	ISOLATED
二极管元件材料	SILICON
二极管类型	SIGNAL DIODE
最大重复峰值反向电压	800 V
最大平均正向电流	1 A

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TIGER ELECTRONIC CO.,LTD

1N4001

1.0 AMP SILICON RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

THRU

1N4007

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

1.0 Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

* Weight: 0.34 grams

.205(5.2)

.166(4.2)

.034(.9)

.028(.7)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance RqJA (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1N4001

1N4002 1N4003 1N4004

1N4005 1N4006 1N4007

UNITS

100

200

140

200

400

280

400

1.0

5.0

-65

+175

600

420

600

800

560

800

1000

700

1000

C/W

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

1N4006相似产品对比

	1N4006	1N4005	1N4003	1N4007	1N4004	1N4002	1N4001
描述	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE
端子数量	2	2	2	2	2	2	2
元件数量	1	1	1	1	1	1	1
状态	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE
包装形状	ROUND	圆	圆	圆	圆	圆	圆
包装尺寸	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
端子形式	WIRE	线	线	线	线	线	线
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
包装材料	PLASTIC/EPOXY	塑料/环氧树脂	玻璃	塑料/环氧树脂	UNSPECIFIED	塑料/环氧树脂	UNSPECIFIED
结构	SINGLE	单一的	单一的	单一的	单一的	单一的	单一的
壳体连接	ISOLATED	隔离	隔离	隔离	隔离	隔离	隔离
二极管元件材料	SILICON	硅	硅	硅	硅	硅	硅
二极管类型	SIGNAL DIODE	信号二极管	信号二极管	信号二极管	信号二极管	信号二极管	信号二极管
最大平均正向电流	1 A	1 A	1 A	1 A	1 A	1 A	1 A
加工封装描述	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN	塑料 PACKAGE-2	ALF-2, DO-41, 2 PIN	塑料 PACKAGE-2	CASE R-1, 2 PIN	-	MINIATURE PACKAGE-2
端子涂层	NOT SPECIFIED	NOT SPECIFIED	-	-	-	锡铅	NOT SPECIFIED
最大重复峰值反向电压	800 V	600 V	-	1000 V	400 V	100 V	-

1N4006

1N4006在线购买

1N4006概述

1N4006规格参数

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