DIP Type
Silicon Epitaxial Planar Diode
1N4148
Diodes
Features
Fast switching diode
DO34
Absolute Maximum Ratings Ta = 25
Parameter
Reverse voltage
Peak reverse voltage
Forward DC current at Tamb = 25
*
Symbol
V
R
V
RM
I
F
I
o
I
FSM
P
tot
T
j
T
stg
Rating
75
100
200
150
500
500
175
-65 to +175
Unit
V
V
mA
mA
mA
mW
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at T
amb
= 25
and f
50 Hz
*
Surge Forward Current at t < 1 s and T
j
= 25
Power Dissipation at T
amb
= 25
Junction Temperature
Storage Temperature Range
*
* Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Symbol
V
F
I
F
=10mA
V
R
= 20 V
Leakage current
I
R
V
R
= 75 V
V
R
= 20 V, T
j
= 150
Reverse Breakdown Voltage
Capacitance
Voltage rise when switching ON
tested with 50 mA forward pulses
Reverse recovery time
Thermal resistance junction to ambient air *
Rectification efficiency
V
(BR)R
C
tot
V
fr
t
rr
R
thJA
ç
v
f = 100 MHz, V
RF
= 2 V
0.45
I
R
= 100ìA
I
R
= 5.0ìA
V
F
= V
R
= 0
tp = 0.1 ìs, Rise Time < 30 ns, fp = 5 to
100 kHz
I
F
= 10 mA I
R
= 1 mA, V
R
= 6 V, R
L
=
100 Ù
100
75
4
2.5
4
pF
V
ns
Testconditons
Min
Typ
Max
1
25
5
50
Unit
V
nA
ìA
ìA
V
0.35 K/mW
* Valid provided that electrodes are kept at ambient temperature.
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