电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

1N4448W

产品描述0.15 A, 75 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小75KB,共3页
制造商FCI [First Components International]
下载文档 全文预览

1N4448W在线购买

供应商 器件名称 价格 最低购买 库存  
1N4448W - - 点击查看 点击购买

1N4448W概述

0.15 A, 75 V, SILICON, SIGNAL DIODE

文档预览

下载PDF文档
Data Sheet
Description
1N4448W High Speed
Switching Diode
Mechanical Dimensions
INCHES
DIM
A
B
C
D
E
F
G
H
MM
MIN
0.055
0.100
0.037
0.020
0.004
0.000
MAX MIN MAX
0.071
1.40 1.80
0.112
2.55 2.85
0.053
0.95 1.35
0.028
0.50 0.70
0.25
0.004 0.00 0.10
0.006
0.15
0.140 0.152
3.55 3.85
1N4448W
SOD-123
1. CATHODE
2. ANODE
Features
n
SURFACE MOUNT PACKAGE
n
MEETS UL SPECIFICATION
94V-0
n
FAST SWITCHING DIODE
n
ELECTRICALLY IDENTICAL TO
JEDEC 1N4448
Electrical Characteristics @ 25
O
C.
Maximum Ratings
Peak Reverse Voltage...V
RM
RMS Reverse Voltage...V
R(rms)
Average Rectified Current...I
F(AV)
Peak Forward Surge Current...I
FSM
1N4448W
100
75
............................................. 150 ...............................................
............................................. 500 ...............................................
Units
Volts
Volts
mAmps
mAmps
mW
°C/W
°C
Volts
nAmps
µAmps
µAmps
pF
nS
nS
-
Power Dissipation...P
D
............................................. 500 ...............................................
............................................. 450 ...............................................
Thermal Resistence...R
θJA
Storage and Operating Temperature Range...T
STRG & J
..................................... -65 to 150 ......................................
Electrical Characteristics
T
J
= 25
°C
Forward Voltage...V
F
@ I
F
= 10 mA
DC Reverse Current...I
R
............................................. 1.0 ...............................................
............................................. 25.0 ...............................................
............................................. 5.0 ...............................................
............................................. 50 ...............................................
............................................. 4 ...............................................
............................................. 2.5 ...............................................
............................................. 4.0 ...............................................
............................................. 0.45 min .........................................
@ V
R
= 20V
@ V
R
= 75V
V
R
= 20V, T
J
= 150°C
Typical Junction Capacitance...C
J
Voltage Rise When switched ON
( 50 mA Pulses)
Reverse Recovery Time...T
RR
Rectification Efficiency...ηv

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2264  221  2501  1005  2674  57  23  36  35  7 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved