1N1199A thru 1N1206AR
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1000 V V
RRM
DO-4 Package
V
RRM
= 50 V - 1000 V
I
F
= 12 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
150 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R)
50
35
50
12
240
100
70
100
12
240
200
140
200
12
240
-65 to 200
-65 to 200
400
280
400
12
240
600
420
600
12
240
Unit
V
V
V
A
A
°C
°C
-65 to 200 -65 to 200
-65 to 200 -65 to 200
-65 to 200 -65 to 200
-65 to 200 -65 to 200
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 12 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 175 °C
1N1199 (R) 1N1200 (R) 1N1202 (R) 1N1204 (R) 1N1206 (R)
1.1
10
15
2.00
1.1
10
15
2.00
1.1
10
15
2.00
1.1
10
15
2.00
1.1
10
15
2.00
Unit
V
μA
mA
°C/W
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
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