1N3671A thru 1N3673AR
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types up to 1000 V V
RRM
DO-4 Package
V
RRM
= 50 V - 1000 V
I
F
= 12 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Repetitive p
p
peak reverse voltage
g
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
I
F,SM
T
j
T
stg
T
C
≤
150 °C
T
C
= 25 °C, t
p
= 8.3 ms
Conditions
1N3671A (R)
800
560
800
12
240
-65 to 200
-65 to 200
1N3673A (R)
1000
700
1000
12
240
-65 to 200
-65 to 200
Unit
V
V
V
A
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 12 A, T
j
= 25 °C
V
R
= 50 V, T
j
= 25 °C
V
R
= 50 V, T
j
= 175 °C
1N3671A (R)
1.1
10
15
2.00
1N3673A (R)
1.1
10
15
2.00
Unit
V
μA
mA
°C/W
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
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