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1N4001_11

产品描述1.0 AMPS. Silicon Rectifiers
文件大小135KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
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1N4001_11概述

1.0 AMPS. Silicon Rectifiers

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CREAR BY ART
Pb
RoHS
COMPLIANCE
1.0 AMPS. Silicon Rectifiers
DO-41
1N4001 - 1N4007
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed: 260℃/10s
/.375", (9.5mm) lead lengths at 5 lbs, (2.3kg) tension
Weight: 0.35 grams
Dimensions in inches and (millimeters)
Marking Diagram
1N400X
G
Y
WW
= Specific Device Code
= Green Compound
= Year
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length @T
A
=75℃
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Rating for Fusing (t<8.3ms)
Maximum Instantaneous Forward Voltage (Note 1)
@1A
Maximum Reverse Current @ Rated VR T
A
=25
T
A
=125℃
Maximum Full load Reverse Current, Full
cycle Average .375"(9.5mm) Lead Lenfth
@T
A
=75℃
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test with PW=300 usec, 1% Duty Cycle
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
T
V
F
I
R
1N
4001
50
35
50
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1
30
3.7
1.0
5
50
30
10
65
6
15
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
Unit
V
V
V
A
A
A
2
S
V
uA
I
R(AV)
Cj
R
θjA
R
θjC
R
θjL
T
J
T
STG
uA
pF
O
C/W
O
O
- 65 to + 150
- 65 to + 150
C
C
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:F11

 
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