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1N4005

产品描述1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
产品类别分立半导体    普通整流二极管   
文件大小196KB,共2页
制造商LGE
官网地址http://www.luguang.cn/web_en/index.html
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1N4005概述

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1 A, 600 V, 硅, 信号二极管, DO-41

1N4005规格参数

参数名称属性值
封装类型
Case Style
DO-41
IF(A)1.0
Maximum recurrent peak reverse voltage600
Peak forward surge curre40
Maximum instantaneous forward voltage1.0
@IVA(A)1.0
Maximum reverse curre5.0
TRR(nS)/
classDiodes

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1N4001 - 1N4007, BY133
1.0 AMP. Silicon Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Eas ily clea ned w ith Freon, Alcohi l,Is opropa nop
a nd s im ilar s olvents
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
o
260 C /10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 0.35 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
o
@T
A
= 75 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@1.0A
Maximum DC Reverse Current @ T
A
=25 C
o
at Rated DC Blocking Voltage @ T
A
=125 C
Maximum Full Load Reverse Current ,Full
Cycle Average .375”(9.5mm) Lead Length
o
@T
A
=75 C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance ( Note 2 )
o
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
HT
IR
Cj
R
θJA
1N
4001
50
35
50
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
BY
Units
133
1300 V
910
V
1300 V
A
1.0
30
1.0
5.0
50
30
10
65
-65 to +150
A
V
uA
uA
uA
pF
C/W
o
C
o
Operating and Storage Temperature Range T
J
,T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Notes:
2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
http://www.luguang.cn
mail:lge@luguang.cn

1N4005相似产品对比

1N4005 1N4006 1N4003 1N4002 1N4001
描述 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE
封装类型
Case Style
DO-41 DO-41 DO-41 DO-41 DO-41
IF(A) 1.0 1.0 1.0 1.0 1.0
Maximum recurrent peak reverse voltage 600 800 200 100 50
Peak forward surge curre 40 40 40 40 40
Maximum instantaneous forward voltage 1.0 1.0 1.0 1.0 1.0
@IVA(A) 1.0 1.0 1.0 1.0 1.0
Maximum reverse curre 5.0 5.0 5.0 5.0 5.0
TRR(nS) / / / / /
class Diodes Diodes Diodes Diodes Diodes

 
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