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1N4005S

产品描述1 A, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小171KB,共2页
制造商DAESAN
官网地址http://www.diodelink.com
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1N4005S概述

1 A, SILICON, SIGNAL DIODE

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1N4001S THRU 1N4007S
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· Construction utilizes void-free molded plastic technique
· Low reverse leakage
· High forward surge current capability
· High reliability
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
A-405
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : A-405 molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.008 ounce, 0.23 gram
0.025(0.6)
0.021(0.5)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=25℃
Peak forward surge current 8.3ms half sing
wave superimposed on rated load
(JEDEC method) at T
A
=75℃
Maximum instantaneous forward voltage
at 1.0A
Maximum reverse
current at rated voltage
T
A
=25℃
T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
JA
C
J
T
J
T
STG
1N
1N
1N
1N
1N
1N
1N
4001S 4002S 4003S 4004S 4005S 4006S 4007S
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.1
5.0
50.0
50.0
15.0
-50 to +175
600
420
600
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
℃/W
pF
Typical thermal resistance (Note 2)
Typical junction capacitance (Note 1)
Operating and Storage temperature Range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, p.c.b. mounted

1N4005S相似产品对比

1N4005S 1N4006S 1N4007S
描述 1 A, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE

 
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