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1N4148WS

产品描述0.15 A, 75 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小568KB,共3页
制造商WILLAS ELECTRONIC CORP.
官网地址http://www.willas.com.tw/
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1N4148WS概述

0.15 A, 75 V, SILICON, SIGNAL DIODE

0.15 A, 75 V, 硅, 信号二极管

1N4148WS规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述塑料 PACKAGE-2
状态TRANSFERRED
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式FLAT
端子涂层NOT SPECIFIED
端子位置
包装材料塑料/环氧树脂
结构单一的
二极管元件材料
最大功耗极限0.2000 W
二极管类型信号二极管
反向恢复时间最大0.0040 us
最大重复峰值反向电压75 V
最大平均正向电流0.1500 A

文档预览

下载PDF文档
WILLAS
SOD-323 Plastic-Encapsulate Diodes
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
1N4148WS
THRU
BAV16WS
FM1200-M
Pb Free Product
Package outline
SOD-323
SOD-123H
Batch process design,
FAST SWITCHING DIODE
excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low
FEATURES
profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial
available
Pb-Free package is
planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix ”G”
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix “H”
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Moisture Sensitivity Level 1
Polarity:
Color
UL94-V0 rated flame retardant
Epoxy :
band denotes cathode end
MARKING:
BAV16WS=T6, 1N4148WS=T4
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Parameter
Polarity : Indicated by cathode band
Mounting Position : Any
Non-Repetitive Peak Reverse Voltage
Weight : Approximated 0.011 gram
Peak Repetitive Peak Reverse Voltage
Symbol
V
RM
V
RRM
Dimensions in inches and (millimeters)
Limit
Unit
V
100
V
RWM
Working Peak
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Reverse Voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
V
R
Single phase half wave, 60Hz, resistive of inductive load.
V
R(RMS)
RMS Reverse Voltage
current by 20%
For capacitive load, derate
100
V
DC Blocking Voltage
 
71
13
30
21
30
14
40
28
40
15
50
35
50
16
18
80
56
80
1.0
 
30
40
120
10
100
70
100
V
115
120
200
140
200
RATINGS
Forward Continuous Current
Marking Code
SYMBOL
I
FM
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
300
mA
Average Rectified Output Current
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Peak Forward Surge
V
RRM
V
RMS
V
DC
I
O
I
O
20
I
FSM
Pd
14
20
12
150
60
2.0
42
1.0
60
200
625
mA
150
A
105
Volt
Current @t=1.0μs
@ t=1.0s
Volt
Maximum DC Blocking Voltage
 
150
Volt
Maximum Average Forward Rectified Current
Power Dissipation
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Thermal Resistance Junction to Ambient
 
I
FSM
R
θJA
R
ΘJA
C
J
T
J
TSTG
mW
℃/W
Am
 
Am
Typical Thermal Resistance (Note 2)
Junction Temperature
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Electrical Ratings @Ta=25℃
T
j
T
STG
 
 
-55 to +125
150
 
Storage Temperature
-55~+150
 
 
-55 to +150
℃/W
PF
-
65
to +175
 
CHARACTERISTICS
Parameter
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
SYMBOL
Symbol
V
F1
V
F2
V
F3
V
F
I
R
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
Min
Typ
Max
Unit
Conditions
0.50
0.715
0.855
1.0
1.25
1
25
2
4
0.70
V
V
0.85
0.9
0.92
 
Volt
0.5
10
I
F
=1mA
@T A=125℃
mAm
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
NOTES:
Forward voltage
V
V
μA
nA
pF
ns
V
F4
I
R1
Reverse current
I
R2
Capacitance between terminals
Reverse recovery time
C
T
t
rr
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
 
 
2- Thermal Resistance From Junction to Ambient
2012-06
Irr=0.1XI
R
,R
L
=100Ω
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.

 
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