1N4148WS / 1N4448WS / 1N914BWS — Small Signal Diodes
April 2012
1N4148WS / 1N4448WS / 1N914BWS
Small Signal Diodes
Features
•
•
•
•
•
•
•
General Purpose Diodes
Fast Switching Device (T
RR
< 4.0ns)
Very Small and Thin SMD Package
Moisture Level Sensitivity 1
Pb-free Version and RoHS Compliant
Matte Tin (Sn) Lead Finish
Green Mold Compound
Device Marking Code
Device Type
1N4148WS
1N4448WS
1N914BWS
Device Marking
S1
S2
S3
1
SOD-323 Flat Lead
Band Indicates Cathode
2
1. Cathode
2. Anode
ELECTRICAL SYMBOL
Absolute Maximum Ratings*
Symbol
V
RSM
V
RRM
I
FRM
I
O
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Continuous Forward Current
Operating Junction Temperature
Storage Temperature Range
Value
100
75
300
150
+150
-55 to +150
Units
V
V
mA
mA
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation (T
C
= 25°C)
Thermal Resistance, Junction to Ambient
*
Value
200
500
Units
mW
°C/W
* Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics
Symbol
BV
R
I
R
V
F
Breakdown Voltage
Reverse Current
T
a
= 25°C unless otherwise noted
Parameter
Test Conditions
I
R
= 100
μA
I
R
= 5
μA
V
R
= 20 V
V
R
= 75 V
Min.
100
75
Typ.
Max.
Units
V
V
25
5
0.62
0.72
1
1
4
4
nA
μA
V
V
V
pF
ns
Forward Voltage 1N4448WS/914BWS I
F
= 5 mA
1N4148WS
I
F
= 10 mA
1N4448WS/914BWS I
F
= 100 mA
Diode Capacitance
Reverse Recovery Time
V
R
= 0, f = 1 MHz
I
F
= 10 mA, I
R
= 60 mA,
I
RR
= 1 mA, R
L
= 100
Ω
C
O
T
RR
© 2012 Fairchild Semiconductor Corporation
1N4148WS / 1N4448WS / 1N914BWS Rev. B0
1
www.fairchildsemi.com
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First Production
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I61
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