1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
Small Signal Diode
SOD-123F
B
Features
Fast switching device(T
rr
<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
C
A
D
E
F
Mechanical Data
Case : Flat lead SOD-123 small outline plastic package
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed: 260
°C/10s
Polarity : Indicated by cathode band
Weight : 8.85±0.5 mg
Marking Code : D1, D2, D3
Dimensions
A
B
C
D
E
F
Unit (mm)
Min
1.5
3.3
0.5
2.5
0.8
0.05
Max
1.7
3.7
0.7
2.7
1.0
0.2
Unit (inch)
Min
Max
0.059 0.067
0.130 0.146
0.020 0.028
0.098 0.106
0.031 0.039
0.002 0.008
Ordering Information
Package
Part No.
Packing
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
3K / 7" Reel
Marking
D1
D2
D3
D1
D2
D3
SOD-123F 1N4148W RH
SOD-123F 1N4448W RH
SOD-123F 1N9148B RH
SOD-123F 1N4148W RHG
SOD-123F 1N4448W RHG
SOD-123F 1N9148B RHG
Pin Configuration
Suggested PAD Layout
0.91
0.036
2.36
0.093
1.22
0.048
4.19
0.165
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
Symbol
P
D
V
RSM
V
RRM
I
FRM
I
O
RθJA
T
J
, T
STG
Value
400
100
75
300
150
450
-65 to + 150
Units
mW
V
V
mA
mA
°C/W
°C
Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method)
Version : D10
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
Small Signal Diode
Electrical Characteristics
Type Number
Reverse Breakdown Voltage
Forward Voltage
1N4448W, 1N914BW
1N4148W
1N4448W, 1N914BW
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time (Note 2)
I
F
= 5.0mA
I
F
= 10.0mA
I
F
= 100.0mA
V
R
= 20V
V
R
= 75V
V
R
=0, f=1.0MHz
I
R
C
J
Trr
V
F
0.62
-
-
-
-
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
nA
μA
pF
ns
V
I
R
= 100uA
I
R
= 5uA
Symbol
V
(BR)
Min
100
75
Max
-
-
Units
V
Notes:2. Reverse Recovery Test Conditions: I
F
=10mA, I
R
=60mA, R
L
=100Ω, I
RR
=1mA
Tape & Reel specification
TSC label
Item
Top Cover Tape
Symbol
A
B
C
d
D
D1
D2
E
F
P0
P1
T
W
W1
Dimension
1.85 ± 0.10
3.94 ± 0.10
1.50 ±0.10
1.5 ± 0.1
178 ± 1
55 Min
13.0 ± 0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.23 ± 0.05
8.00 ±0.20
14.4 Max
Carrier width
Carrier length
Carrier depth
Sprocket hole
Carieer Tape
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Any Additional Label (If Required)
d
T
A
P
1
P
0
Punch hole position
Sprocke hole pitch
E
F
Embossment center
Overall tape thickness
W
C
B
Tape width
Reel width
W1
D
D
2
D
1
Version : D10
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
100
FIG 2 Reverse Current vs Reverse Voltage
100
Instantaneous Forward Current
(A)
Reverse Current (uA)
10
1
10
Ta=25°C
Ta=25°C
0.1
1
0.01
0.1
0.001
0
0.2
Instantaneous Forward Volatge (V)
0.4
0.6
0.8
1
1.2
1.4
1.6
0.01
0
20
Reverse Volatge (V)
40
60
80
100
120
FIG 3 Admissible Power Dissipation Curve
500
6
FIG 4 Typical Junction Capacitance
Junction Capacitance (pF)
0
20
40
60
80
100
120
140
160
Power Dissipation (mW)
400
300
200
100
0
5
4
3
2
1
0
0
2
4
6
8
10
Ambient Temperature (°C)
Reverse Voltage (V)
FIG 5 Forward Resistance vs. Forward Current
10000
Dynamic Forward Resistance (Ώ)
1000
100
10
1
0
0
Forward Current (mA)
1
10
100
Version : D10
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