1N4150
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
•
•
•
•
•
Silicon Epitaxial Planar Diode
Low forward voltage drop
e2
High forward current capability
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Applications
• High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case:
DO35 Glass case
Weight:
approx. 125 mg
Cathode Band Color:
black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
1N4150
Ordering code
1N4150-TR or 1N4150-TAP
Type Marking
1N4150
Remarks
Tape and Reel/Ammopack
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average peak forward current
Forward continuous current
Average forward current
Power dissipation
V
R
= 0
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
≤
25 °C
t
p
= 1 µs
Test condition
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAV
P
tot
P
tot
Value
50
50
4
600
300
150
440
500
Unit
V
V
A
mA
mA
mA
mW
mW
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction temperature
Storage temperature range
Test condition
Symbol
R
thJA
T
j
T
stg
Value
350
175
- 65 to + 175
Unit
K/W
°C
°C
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant
Document Number 85522
Rev. 1.7, 16-Feb-07
www.vishay.com
1
1N4150
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
Reverse current
Diode capacitance
Reverse recovery time
V
R
= 50 V
V
R
= 50 V, T
j
= 150 °C
V
R
= 0, f = 1 MHz, V
HF
= 50 mV
I
F
= I
R
= (10 to 100) mA, i
R
= 0.1
x I
R
, R
L
= 100
Ω
Symbol
V
F
V
F
V
F
V
F
V
F
I
R
I
R
C
D
t
rr
Min
540
660
760
820
870
Typ.
Max
620
740
860
920
1000
100
100
2.5
4
Unit
mV
mV
mV
mV
mV
nA
µA
pF
ns
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
100
I
R
- Reverse Current (µA)
1000
Scattering Limit
I
F
- Forward Current (mA)
10
100
Scattering Limit
10
1
0.1
V
R
= 50
V
0
40
80
120
160
200
1
T
j
= 25 °C
0
0.4
0.8
1.2
1.6
2.0
0.01
94 9100
0.1
94 9162
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
Package Dimensions
in mm (inches):
DO35
Cathode Identification
0.55 max. (0.022)
1.7 (0.067)
Rev. 6 - Date: 29.January 2007
Document no.: 6.560-5004.02-4
94 9366
www.vishay.com
2
Document Number 85522
Rev. 1.7, 16-Feb-07
1.5 (0.059)
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
1N4150
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85522
Rev. 1.7, 16-Feb-07
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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