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1N4006G

产品描述SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小865KB,共2页
制造商TAYCHIPST
官网地址http://www.taychipst.com
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1N4006G概述

SILICON, SIGNAL DIODE

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1N4001G-1N4007G,BY133G
50V-1000V
GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS
1.0A
FEATURES :
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
1N
1N
1N
1N
1N
1N
1N
BY
4001G 4002G 4003G 4004G 4005G 4006G 4007G 133G
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
1300
910
1300
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
Volts
Volts
Volts
Amp.
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
30
1.0
5.0
50
8
45
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

1N4006G相似产品对比

1N4006G 1N4002G 1N4005G 1N4003G 1N4004G 1N4001G 1N4007G BY133G
描述 SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 SILICON, SIGNAL DIODE
状态 - ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE ACTIVE -
二极管类型 - SIGNAL DIODE SIGNAL DIODE 信号二极管 信号二极管 信号二极管 信号二极管 -

 
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