WILLAS
1N4151 SIGNAL DIODE
SCS
1N4151
VOL
0.1AMP Scho
Pb Free Product
.022(0.55)
.018(0.45)
FEATURES
Absolute Maximum Ratings (Ta=25
°
C)
Dimensions (DO-35
)
Items
Symbol Ratings Unit
* Extremely Low VF
Reverse Voltage
VR
50
V
* Extremely thin package
Reverse Recovery
trr
2
ns
* Low stored charge
Time
1 . 02 (2 6 .0 )
MIN.
* Majority carrier conduction
Power Dissipation
P
500
mW
3.33mW/
°
C (25
°
C)
Forward Current
IF
300
mA
.153(3.6)
Junction Temp.
Tj
-65 to 175
°
C
.132(3.0)
Storage Temp.
Tstg -65 to 175
°
C
MECHANICAL DATA
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
* Case:Molded plastic, JEDEC SOD-323(SC-76)
1.02(26.0)
SO
.012
C
.112 (2.85)
.100 (2.55)
.076 (1.95)
.059 (1.5)
.067(1.7)
* Terminal : Solder plated, solderable per MIL-STD-750,
MIN.
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
Dime nsions in mi llime ters
Marking C
Electrical Characteristics (Ta=25
°
C)
Ratings
Symbol
Ratings
Unit
Breakdown Voltage
BV
V
IR= 5.0uA
75
Peak Forward Surge Current PW= 1sec.
IFsurge
1.0
A
Maximum Forward Voltage
VF
V
Rating 25
o
C ambient temperature unless otherwise specified.
IF= 50mA
1.0
Single phase half wave, 60Hz, resistive of inductive load.
Maximum Reverse Current
uA
For capacitive load, derate
IR
current by 20%
VR= 50V
0.050
VR= 20V, Tj= 150
°
C
50
Conditions
Parameter
Maximum Junction Capacitance
Cj
pF
Repetitive Peak Reverse Voltage
VR= 0, f= 1 MHz
2
Continuous Reverse Voltage
Max Reverse Recovery Time
trr
ns
I
F
= 10mA DC
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Ω
Forward Voltage
2
I
F
= 100mA DC
Reverse Current
Mean Rectifying Current
Peak forward surge current
Capacitance between terminals
Operating Temperature
Storage Temperature
V
R
= 10V DC
MAXIMUM RATING AND ELECTRICAL CHARA
WILLAS ELECTRONIC CORP.
.004 (0.1)
max.
.087(2.2)
.043 (1.1)
Sym
V
R
V
R
V
F
V
F
I
R
I
O
I
FS
C
T
T
J
T
ST
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
