1N4151WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode
• This diode is also available in other case
styles including the DO-35 case with the
type designation 1N4151, and the
MiniMELF case with the type designation
LL4151.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD-323
Weight:
approx. 5 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
1N4151WS-V
Ordering code
1N4151WS-V-GS18 or 1N4151WS-V-GS08
Marking
A5
Remarks
Tape and Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Peak reverse voltage
Average rectified current half
wave rectification with resistive
load
Surge current
Power dissipation
1)
Test condition
Symbol
V
R
V
RM
Value
50
75
150
1)
500
410
1)
Unit
V
V
mA
mA
mW
f
≥
50 Hz
t < 1 s and T
j
= 25 °C
I
F(AV)
I
FSM
P
tot
Valid provided that electrodes are kept at ambient temperature.
Document Number 85847
Rev. 1.4, 12-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
1N4151WS-V
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
450
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Leakage current
Reverse breakdown voltage
Capacitance
Reverse recovery time
Test condition
I
F
= 50 mA
V
R
= 50 V
V
R
= 20 V, T
j
= 150 °C
I
R
= 5 µA (pulsed)
V
F
= V
R
= 0 V
I
F
= 10 mA to I
R
= 10 mA
to I
R
= 1 mA
I
F
= 10 mA to I
R
= 1 mA,
V
R
= 6 V, R
L
= 100
Ω
Rectification efficiency
f = 100 MHz, V
RF
= 2 V
t
rr
t
rr
η½
0.45
Symbol
V
F
I
R
I
R
V
(BR)
75
2
4
2
Min.
Typ.
Max.
1
50
50
Unit
V
nA
µA
V
pF
ns
ns
Rectification Efficiency Measurement Circuit
60
Ω
V
RF
= 2
V
2 nF
5 kΩ
V
O
17436
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number 85847
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.4, 12-Aug-10
1N4151WS-V
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
1000
100
T
j
= 100
°
C
C
tot
- Relative Capacitance (pF)
1.1
1.0
0.9
I
F
- Forward Current (mA)
T
j
= 25
°
C
f = 1 MHz
10
25
°
C
1
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.8
0.7
0
2
4
6
8
10
18742
V
F
- Forward
Voltage
(V)
18664
V
R
- Reverse
Voltage
(V)
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Relative Capacitance vs. Reverse Voltage
10000
r
f
- Dynamic Forward Resistance
(Ω)
T
j
= 25
°
C
f = 1 kHz
1000
10000
I
R
- Leakage Current (nA)
1000
100
100
10
10
V
R
= 50
V
1
1
0.01
18662
0.1
1
10
I
F
- Forward Current (mA)
100
18744
0 20
40 60
80
100 120 140 160 180 200
T
j
- Junction Temperature (°C)
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 5. Leakage Current vs. Junction Temperature
P
tot
- Admissible Power Dissipation (mW)
1000
800
600
400
200
0
0 20 40 60
80
100 120 140 160180 200
T
amb
- Ambient Temperature (°C)
18743
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85847
Rev. 1.4, 12-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
1N4151WS-V
Vishay Semiconductors
100
I
I
FRM
- Admissible Repetitive
Peak Forward Current (A)
½
= t
p
/T
t
p
I
FRM
T = 1/f
p
10
½
= 0
0.1
0.2
t
T
1
0.5
18709
10
-5
10
-4
10
-3
10
-2
t
p
- Pulse Length (s)
10
-1
1
10
Figure 6. Admissible Repetitive Peak Forward Current vs. Pulse Duration
Package Dimensions
in millimeters (inches):
SOD-323
1.15 (0.045)
0.8 (0.031)
0.2 (0.008)
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
0.40 (0.016)
0.20 (0.008)
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
1.5 (0.059)
1.1 (0.043)
0° to 8
°
0.1 (0.004) max.
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
1.6 (0.063)
17443
www.vishay.com
4
For technical questions within your region, please contact one of the following: Document Number 85847
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Rev. 1.4, 12-Aug-10
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
Legal Disclaimer Notice
www.vishay.com
Vishay
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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