WILLAS
SOD-323 Plastic-Encapsulate Diodes
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FAST SWITCHING DIODE
Package outline
FEATURES
process design, excellent power dissipation offers
•
Batch
better reverse
Speed
Fast Switching
leakage current and thermal resistance.
•
Low profile surface mounted application in order to
Surface Mount Package Ideally Suited for Automatic Insertion
optimize board space.
•
General Purpose Switching Applications
For
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
High Conductance
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
RoHS product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Halogen free product for packing code suffix “H”
•
Lead-free parts meet environmental standards of
Moisture Sensitivity Level 1
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Polarity:
Color band denotes cathode end
Halogen free product for packing code suffix "H"
FM120-M
THRU
1N4448WS
FM1200-M
Pb Free Product
SOD-323
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MARKING: T5
Mechanical data
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
Parameter
terminals, solderable per MIL-STD-750 ,
Symbol
Limit
•
Terminals :Plated
Non-Repetitive Peak
Reverse Voltage
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Unit
V
•
Polarity : Indicated by cathode band
Peak Repetitive Peak
Reverse Voltage
•
Mounting Position : Any
Working Peak
Reverse Voltage
•
Weight : Approximated 0.011 gram
DC Blocking Voltage
RMS Reverse Voltage
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
100
Dimensions in inches and (millimeters)
75
V
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
53
500
250
4.0
15
50
1.5
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave,
Current
I
FM
Forward Continuous
60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
mA
mA
Average Rectified Output Current
RATINGS
Peak
Forward Surge Current
@t=1.0μs
Marking Code
Maximum Recurrent Peak Reverse Voltage
@t =1.0s
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
I
O
V
RRM
V
RMS
V
DC
O
R
I
θJA
I
FSM
Pd
12
20
14
20
13
30
21
30
14
40
28
40
16
60
42
60
1.0
30
40
120
18
80
56
80
10
100
70
100
A
115
150
105
150
120
200
140
200
Vol
Power Dissipation
200
50
35
mW
Vol
Vol
Thermal Resistance Junction to
Ambient
Peak Forward Surge Current 8.3 ms single half sine-wave
Storage
Temperature
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
T
STG
R
ΘJA
C
J
T
J
I
FSM
625
-55~+150
℃/W
Am
℃
Am
Electrical Ratings @Ta=25℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
-55 to +125
-55 to +150
℃/W
PF
Max
75
Unit
V
℃
Parameter
Storage Temperature Range
Symbol
TSTG
V
(BR)
V
V
F1
F
@T A=125℃
Min
Typ
-
65
to +175
Conditions
℃
Reverse
breakdown voltage
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
I
R
=10μA
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.62
0.50
0.72
0.70
V
I
R
V
F2
0.855
1.0
1.25
2.5
25
4
4
V
V
V
μA
nA
pF
ns
0.5
10
0.85
I
F
=5mA
0.9
0.92
Vol
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
mAm
Forward voltage
NOTES:
2- Thermal Resistance From Junction to Ambient
V
F3
V
F4
I
R1
I
R2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Reverse current
Capacitance between terminals
Reverse
recovery time
C
T
t
rr
2012-06
WILLAS ELECTRONIC CORP.
Irr=0.1XI
R
,R
L
=100Ω
2012-1
WILLAS ELECTRONIC CORP.
SOD-323 Plastic-Encapsulate Diodes
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
THRU
1N4448WS
FM1200-M
Pb Free Product
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
capability.
•
High surge
Forward Characteristics
300
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
100
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
30
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T=
a
10
0
℃
Typical Characteristics
10000
3000
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Reverse
Characteristics
0.071(1.8)
0.056(1.4)
(mA)
(nA)
1000
300
100
30
10
3
1
T
a
=100
℃
I
F
FORWARD CURRENT
Mechanical data
Epoxy : UL94-V0 rated flame retardant
•
3
•
Case : Molded plastic, SOD-123H
,
1
•
Terminals :Plated terminals, solderable per MIL-STD-750
T =2
a
5
℃
10
REVERSE CURRENT I
R
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
T
a
=25
℃
0.031(0.8) Typ.
Method 2026
0.3
•
Polarity : Indicated by cathode band
Mounting Position : Any
•
0.1
0.0
0.4
0.8
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
1.2
1.6
0
20
40
60
80
100
FORWARD VOLTAGE
V
F
(V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
1.6
REVERSE VOLTAGE
V
R
(V)
Capacitance Characteristics
RATINGS
250
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Power Derating Curve
16
60
42
60
1.0
30
40
120
18
80
56
80
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
1.2
T
a
=25
℃
f=1MHz
1.4
(mW)
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
200
14
40
28
40
15
50
35
50
10
100
70
100
115
150
105
150
120
200
140
200
Vo
Vo
P
D
30
Vo
POWER DISSIPATION
150
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
0.8
Storage Temperature Range
1.0
100
-55 to +150
℃
P
-55 to +125
50
-
65
to +175
℃
℃
0.6
Maximum Forward Voltage at 1.0A DC
REVERSE VOLTAGE V
Maximum Average Reverse Current at @T A=25℃
R
Rated DC Blocking Voltage
0
CHARACTERISTICS
4
8
12
0
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
(V)
16
V
F
20
0.50
0
25
@T A=125℃
I
R
0.70
0.85
AMBIENT TEMPERATURE T
a
0.5
10
50
75
100
125
(
℃
)
0.9
150
0.92
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS
SOD-323 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
THRU
1N4448WS
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
.106(2.70)
.091(2.30)
.057(1.45)
.045(1.15)
SOD-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-123H
.016(0.40)
.010(0.25)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.075(1.90)
.059(1.50)
.043(1.10)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.031(0.80)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
.004(0.10)MAX.
18
80
56
80
10
100
70
100
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
40
120
115
150
105
150
120
200
140
200
Vol
Vol
Vol
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.008(0.20)
.004(0.10)
-55 to +125
Am
-55 to +150
℃/W
PF
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
@T A=125℃
I
R
.016(0.40)
0.50
.010(0.25)
0.70
0.5
10
0.85
0.9
0.92
Vol
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.010(0.25)MIN.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP.
Rev.C
2012-1
WILLAS ELECTRONIC CORP.
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