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MADP-030025-1314

产品描述SILICON, PIN DIODE
产品类别半导体    分立半导体   
文件大小818KB,共5页
制造商MACOM
官网地址http://www.macom.com
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MADP-030025-1314概述

SILICON, PIN DIODE

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MADP-017025-1314
MADP-030025-1314
SURMOUNT™ 25μM PIN Diodes
RoHS Compliant
Case Style ODS 1314
Features
0603 Outline
Surface Mount
25µm I-Region Length Devices
No Wirebonds Required
Silicon Nitride Passivation
Polymer Scratch Protection
Low Parasitic Capacitance and Inductance
High Average and Peak Power Handling
Rev. V5
Description
This device is a silicon, glass PIN diode surmount chip
fabricated with M/A-COM’s patented HMIC
TM
process.
This device features two silicon pedestals embedded in a
low loss, low dispersion glass. The diode is formed on the
top of one pedestal and connections to the backside of the
device are facilitated by making the pedestal sidewalls
electrically conductive. Selective backside metallization is
applied producing a surface mount device. This vertical
topology provides for exceptional heat transfer. The
topside is fully encapsulated with silicon nitride and has an
additional polymer layer for scratch and impact protection.
These protective coatings prevent damage to the junction
and the anode air-bridge during handling and assembly.
Applications
These packageless devices are suitable for usage in
moderate incident power, ≤50dBm/C.W. or where the peak
power is ≤75dBm, pulse width is 1μS, and duty cycle is
0.01%. Their low parasitic inductance, 0.4 nH, and
excellent RC constant, make these devices a superior
choice for higher frequency switch elements when
compared to their plastic package counterparts
.
Chip Dimensions
DIM
A
B
C
D
E
F
G
Notes:
1) Backside metal: 0.1microns thick.
2) Yellow area with hatch lines indicate backside ohmic gold
contacts.
3) Both devices have same outline dimensions ( A to G).
INCHES
Min
0.060
0.031
0.004
0.019
0.019
0.019
0.029
Max
0.062
0.032
0.008
0.021
0.021
0.021
0.031
Min
1.525
0.775
0.102
0.475
0.475
0.475
0.725
MM
Max
1.575
0.825
0.203
0.525
0.525
0.525
0.775
Absolute Maximum Ratings
1
@ TA = +25°C
(unless otherwise specified)
Parameter
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
C.W. Incident Power
Mounting Temperature
Absolute Maximum
500 mA
- 135 V
-55°C to +125°C
-55 °C to +150°C
+175°C
50dBm
+280°C for 30 seconds
1) Exceeding these limits may cause permanent damage
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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