SS52BF THRU SS520BF
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 200 Volts
Forward Current - 5.0 Ampere
SMBF
Cathode Band
Top View
FEATURES
Metal silicon junction,majority carrier conduction
For surface mounted applications
Low power loss,high efficiency
High forward surge current capability
For use in low voltage,high frequency inverters,
free wheeling,and polarity protection applicatlons
0.146(3.70)
0.138(3.50)
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.051(1.30)
0.043(1.10)
0.010(0.26)
0.0071(0.18)
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
Case:
JEDEC SMBF molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:57mg/0.002oz
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SS52BF SS54BF
SS56BF SS58BF
S56B
S58F
SS510BF
S510B
SS515BF SS520BF
S515B
S520B
UNITS
S52B
S54B
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
40
28
40
60
42
60
80
56
80
5.0
100
70
100
150
105
150
200
140
200
VOLTS
VOLTS
VOLTS
Amp
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
800
0.55
0.70
150.0
0.85
1.0
50
500
40.0
-50 to +125
-50 to +150
0.95
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES SS52BF THRU SS520BF
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
6.0
10
4
T
J
=100
°C
Fig.2 Typical Reverse Characteristics
Average Forward Current (A)
100LFM
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7
×12.7mm
) pad areas
10
3
10
2
T
J
=75
°C
10
1
T
J
=25
°C
10
0
0
20
40
60
80
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
1
SS52BF
SS54BF
SS56BF/SS58BF
SS510BF/SS520BF
100
SS52BF/SS54BF
20
10
0.1
SS54F/SS520F
SS56BF-SS520BF
0.1
0
0.5
1.0
1.5
2.0
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
175
150
125
100
75
50
25
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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