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RS3M

产品描述3 A, 1000 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小533KB,共2页
制造商Chenda
官网地址http://www.szchenda.com
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RS3M概述

3 A, 1000 V, SILICON, RECTIFIER DIODE

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RS3A THRU RS3M
SURFACE MOUNT FAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 1000 Volts
DO-214AA/SMB
Forward Current - 3.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction
0.087 (2.20)
0.071 (1.80)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.122(3.12)
0.110(2.82)
MECHANICAL DATA
Case
: JEDEC DO-214AA molded plastic body over passivated chip
Terminals
: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.003 ounce, 0.093 grams
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
SYMBOLS
RS3A RS3B RS3D RS3G RS3J
RS3K RS3M
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
,
T
STG
150
100.0
1.3
5.0
100.0
250
60.0
50.0
-50 to +150
500
Amps
Volts
µ
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

RS3M相似产品对比

RS3M RS3A RS3B RS3G RS3K RS3J RS3D
描述 3 A, 1000 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB

 
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