FIFO, 1KX9, 45ns, Asynchronous, CMOS, CDIP28,
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 45 ns |
最大时钟频率 (fCLK) | 18.18 MHz |
JESD-30 代码 | R-XDIP-T28 |
JESD-609代码 | e0 |
内存密度 | 9216 bit |
内存集成电路类型 | OTHER FIFO |
内存宽度 | 9 |
端子数量 | 28 |
字数 | 1024 words |
字数代码 | 1000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 1KX9 |
封装主体材料 | CERAMIC |
封装代码 | DIP |
封装等效代码 | DIP28,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
电源 | 5 V |
认证状态 | Not Qualified |
筛选级别 | MIL-STD-883 Class B (Modified) |
最大待机电流 | 0.0008 A |
最大压摆率 | 0.12 mA |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
MM1P-67202L-45-8 | MM1P-67202L-45MB | MM1P-67202V-55MB | MM1P-67202L-35-8 | MM4J-67202L-45-8 | MM4J-67202L-55-8 | MM4J-67202L-55MB | MM4J-67202L-35MB | MM4J-67202V-55-8 | |
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描述 | FIFO, 1KX9, 45ns, Asynchronous, CMOS, CDIP28, | FIFO, 1KX9, 45ns, Asynchronous, CMOS, CDIP28, | FIFO, 1KX9, 55ns, Asynchronous, CMOS, CDIP28, | FIFO, 1KX9, 35ns, Asynchronous, CMOS, CDIP28, | FIFO, 1KX9, 45ns, Asynchronous, CMOS, CQCC32, | FIFO, 1KX9, 55ns, Asynchronous, CMOS, CQCC32, | FIFO, 1KX9, 55ns, Asynchronous, CMOS, CQCC32, | FIFO, 1KX9, 35ns, Asynchronous, CMOS, CQCC32, | FIFO, 1KX9, 55ns, Asynchronous, CMOS, CQCC32, |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 45 ns | 45 ns | 55 ns | 35 ns | 45 ns | 55 ns | 55 ns | 35 ns | 55 ns |
最大时钟频率 (fCLK) | 18.18 MHz | 18.18 MHz | 15.38 MHz | 22.22 MHz | 18.18 MHz | 15.38 MHz | 15.38 MHz | 22.22 MHz | 15.38 MHz |
JESD-30 代码 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XQCC-N32 | R-XQCC-N32 | R-XQCC-N32 | R-XQCC-N32 | R-XQCC-N32 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存密度 | 9216 bit | 9216 bit | 9216 bit | 9216 bit | 9216 bit | 9216 bit | 9216 bit | 9216 bit | 9216 bit |
内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
端子数量 | 28 | 28 | 28 | 28 | 32 | 32 | 32 | 32 | 32 |
字数 | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words |
字数代码 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 1KX9 | 1KX9 | 1KX9 | 1KX9 | 1KX9 | 1KX9 | 1KX9 | 1KX9 | 1KX9 |
封装主体材料 | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
封装代码 | DIP | DIP | DIP | DIP | QCCN | QCCN | QCCN | QCCN | QCCN |
封装等效代码 | DIP28,.3 | DIP28,.3 | DIP28,.3 | DIP28,.3 | LCC32,.45X.55 | LCC32,.45X.55 | LCC32,.45X.55 | LCC32,.45X.55 | LCC32,.45X.55 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
筛选级别 | MIL-STD-883 Class B (Modified) | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | MIL-STD-883 Class B (Modified) | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | MIL-STD-883 Class B (Modified) |
最大待机电流 | 0.0008 A | 0.0008 A | 0.00002 A | 0.0008 A | 0.0008 A | 0.0008 A | 0.0008 A | 0.0008 A | 0.00002 A |
最大压摆率 | 0.12 mA | 0.12 mA | 0.1 mA | 0.14 mA | 0.12 mA | 0.1 mA | 0.1 mA | 0.14 mA | 0.1 mA |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | QUAD | QUAD | QUAD | QUAD | QUAD |
Objectid | - | - | - | 101164914 | 101165776 | 101165778 | 101165779 | 101165775 | 101165780 |
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