NTMFS4927N,
NTMFS4927NC
Power MOSFET
Features
30 V, 38 A, Single N−Channel, SO−8 FL
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(ON)
MAX
7.3 mW @ 10 V
12.0 mW @ 4.5 V
D (5,6)
I
D
MAX
38 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
Steady
State
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
C
= 25°C
T
C
=100°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
13.6
8.6
2.70
20.4
12.9
6.04
7.9
5.0
0.92
38
24
20.8
160
100
−55
to
+150
21
6.0
20
W
A
A
°C
A
V/ns
mJ
W
A
W
1
Unit
V
V
A
S (1,2,3)
W
A
N−CHANNEL MOSFET
G (4)
MARKING
DIAGRAM
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
4927N
A
Y
W
ZZ
S
S
S
G
4927N
AYWZZ
D
D
A
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4927NT1G
NTMFS4927NCT1G
NTMFS4927NT3G
NTMFS4927NCT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 20 V,
I
L
= 20 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
−
Rev. 8
1
Publication Order Number:
NTMFS4927N/D
NTMFS4927N, NTMFS4927NC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
6.0
46.3
136.2
20.7
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
C
ISS
C
OSS
C
RSS
C
RSS
/
C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 15 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
9.2
25.5
14.0
4.4
ns
913
366
108
0.118
8.0
1.6
3.1
3.1
16.0
nC
nC
0.237
pF
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
VGS = 0 V, I
D(aval)
= 8.4 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
24
1.0
10
±100
V
V
Symbol
Test Condition
Min
Typ
Max
Unit
mV/°C
mA
nA
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.32
1.6
3.7
5.8
5.7
9.6
9.2
40
2.2
V
mV/°C
7.3
mW
12
S
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4927N, NTMFS4927NC
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.87
0.76
21.4
10.5
10.9
8.4
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
6.5
21.0
18.0
3.0
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
1.00
0.005
1.84
0.90
2.2
nH
nH
nH
W
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
100
90
I
D
, DRAIN CURRENT (A)
80
70
60
50
40
30
20
10
0
V
GS
= 2.5 V
0
1
2
3
4
5
3.0 V
3.5 V
100
4.5 V
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
4.0 V
90
80
70
60
50
40
30
20
10
0
V
DS
= 10 V
T
J
= 125°C
10 V
T
J
=
−55°C
T
J
= 25°C
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
I
D
= 30 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.019
0.017
0.015
0.013
0.011
0.009
0.007
0.005
0.003
10
20
Figure 2. Transfer Characteristics
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
3
4
5
6
V
GS
(V)
7
8
9
10
30
40
50
60
70
80
90 100
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
10
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1,000
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
V
GS
= 0 V
5
10
15
20
25
30
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4927N, NTMFS4927NC
TYPICAL CHARACTERISTICS
1200
1000
C, CAPACITANCE (pF)
800
600
400
200
0
0
5
C
rss
10
15
20
25
30
C
iss
T
J
= 25°C
V
GS
= 0 V
11
10
9
8
7
6
5
4
3
2
1
0
Qgs
Qgd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 30 A
0 1
2 3 4 5
6 7 8 9 10 11 12 13 14 15 16 17
Qg, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
C
oss
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
V
GS
= 10 V
V
DD
= 15 V
I
D
= 15 A
I
S
, SOURCE CURRENT (A)
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
25
20
15
10
T
J
= 125°C
5
0
T
J
= 25°C
t
d(off)
t
f
t
r
t, TIME (ns)
100
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
100
10
ms
10
1
0.1
0.01
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
ms
1 ms
10 ms
dc
20
18
16
14
12
10
8
6
4
2
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 20 A
I
D
, DRAIN CURRENT (A)
100
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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