SMK0160IS
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 4.46
Max. 62.5
Unit
°C/W
Electrical Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
(Note 3,4)
(Note 3,4)
(Note 3,4)
(Note 3)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=0.5A
V
DS
=10V, I
D
=0.5A
V
DS
=25V, V
GS
=0V,
f=1MHz
Min.
600
2
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
9.3
0.32
131
19.4
3.4
5.5
5
13
28
3.9
1.7
0.85
Max.
-
4
1
±100
11.5
-
164
24.3
4.3
-
-
-
-
4.9
-
-
Unit
V
V
uA
nA
Ω
S
pF
Turn-off delay time
Fall time
(Note 3,4)
V
DD
=300V, I
D
=1A,
R
G
=25Ω
-
-
-
-
ns
Total gate charge
(Note 3,4)
(Note 3,4)
Q
g
Q
gs
Q
gd
V
DS
=480V, V
GS
=10V,
I
D
=1A
Gate-source charge
Gate-drain charge
-
-
nC
(Note 3,4)
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3,4)
(Note 3,4)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=1A
I
S
=1A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
190
0.53
Max.
1.0
4.0
1.4
-
-
Unit
A
A
V
ns
uC
Reverse recovery charge
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=90mH, I
AS
=1A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 22-MAR-12
KSD-T6Q014-000
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