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SMF120A

产品描述1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219
产品类别半导体    分立半导体   
文件大小594KB,共6页
制造商UN semiconductor
官网地址http://www.unsemi.com.tw/
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SMF120A概述

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219

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Surface Mount Transient Voltage Suppressors (TVS)
SMF Series
Description
The SMF series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
5.0 To 190 V
200W
Uni-directional
Bi-directional
Features
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
Compatible with industrial standard package SOD-123
For surface mounted applications in order to optimize board space
Low leakage
Uni and Bidirectional unit
Glass passivated junction
Low inductance
Excellent clamping capability
200W Peak power capability at 10
×
1000µs waveform Repetition rate
(duty cycle):0.01%
Fast response time: typically less than 1.0ps from 0 Volts to V
BR
min
High Temperature soldering: 260°C/40 seconds at terminals
Typical maximum temperature coefficient
ΔV
BR
= 0.1%
×
V
BR
@25°C×
ΔT
Plastic package has Underwriters Laboratory Flammability 94V-0
Matte tin lead–free Plated
Halogen free and RoHS compliant
Typical failure mode is short from over-specified voltage or current
Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Functional Diagram
Bi-directional
Cathode
Uni-direction
Anode
Applications
TVS devices are ideal for the protection of I/O interfaces, V
CC
bus and other vulnerable circuits used in Telecom, Computer,
Industrial and Consumer electronic applications.
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
P
PPM
P
PPM
I
PP
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
200
1000
See Next Table
0.4
20
3.5
-55 to +150
Unit
Watts
Watts
Amps
Watt
Amps
Voltage
°C
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
Peak Pulse Power Dissipation with a 8/20µs waveform (Fig.1)(Note 1),
(Note 2)
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Power Dissipation on Infinite Heat Sink at T
L
=75°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
Operating junction and Storage Temperature Range.
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. V
F
< 3.5V for V
BR
< 200V and V
F
< 6.5V for V
BR
> 201V.
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/6
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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