PESD5V0S1BA; PESD5V0S1BB;
PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 04 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD
plastic packages designed to protect one signal line from the damage caused by ESD and
other transients.
Table 1.
Product overview
Package
NXP
PESD5V0S1BA
PESD5V0S1BB
PESD5V0S1BL
SOD323
SOD523
SOD882
JEITA
SC-76
SC-79
-
Type number
1.2 Features
I
I
I
I
Bidirectional ESD protection of one line
Max. peak pulse power: P
PP
= 130 W
Low clamping voltage: V
(CL)R
= 14 V
Ultra low leakage current: I
RM
= 5 nA
I
I
I
I
ESD protection > 30 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 12 A
Ultra small SMD plastic packages
1.3 Applications
I
Cellular handsets and accessories
I
Portable electronics
I
Computers and peripherals
I
Communication systems
I
Audio and video equipment
1.4 Quick reference data
Table 2.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse stand-off voltage
diode capacitance
V
R
= 0 V;
f = 1 MHz
Conditions
Min
-
-
Typ
-
35
Max
5
45
Unit
V
pF
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode 1
cathode 2
1
001aab540
Simplified outline
Symbol
SOD323, SOD523
2
1
sym045
2
SOD882
1
2
cathode 1
cathode 2
1
2
1
sym045
2
Transparent
top view
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0S1BA
PESD5V0S1BB
PESD5V0S1BL
SC-76
SC-79
-
Description
plastic surface mounted package; 2 leads
plastic surface mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD323
SOD523
SOD882
Type number
4. Marking
Table 5.
Marking codes
Marking code
E6
L7
F1
Type number
PESD5V0S1BA
PESD5V0S1BB
PESD5V0S1BL
PESD5V0S1BA_BB_BL_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
2 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
T
j
T
amb
T
stg
[1]
[2]
Parameter
peak pulse power
peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
8/20
µs
8/20
µs
[1][2]
[1][2]
Min
-
-
-
−65
−65
Max
130
12
150
+150
+150
Unit
W
A
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
Measured from pin 1 to pin 2.
Table 7.
ESD
ESD maximum ratings
Conditions
IEC 61000-4-2 (contact
discharge)
HBM MIL-Std 883
[1][2]
Symbol Parameter
electrostatic discharge
capability
Min
-
-
Max
30
10
Unit
kV
kV
[1]
[2]
Measured from pin 1 to pin 2.
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see
Figure 2.
Table 8.
Standard
ESD standards compliance
Conditions
>
15 kV (air);
>
8 kV (contact)
>
4 kV
IEC 61000-4-2, level 4 (ESD);
Figure 2
HBM MIL-STD 883; class 3
PESD5V0S1BA_BB_BL_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
3 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
001aaa191
120
I
pp
(%)
80
100 % I
pp
; 8
µs
mle218
I
pp
100 %
90 %
e
−t
50 % I
pp
; 20
µs
40
10 %
t
r
=
0.7 to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
PESD5V0S1BA_BB_BL_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
4 of 15
NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
Per diode
V
RWM
I
RM
V
(CL)R
V
(BR)
r
dif
C
d
reverse stand-off voltage
reverse leakage current
clamping voltage
breakdown voltage
differential resistance
diode capacitance
V
RWM
= 5 V;
see
Figure 6
I
PP
= 1 A
I
PP
= 12 A
I
R
= 1 mA
I
R
= 1 mA
V
R
= 0 V; f = 1 MHz;
see
Figure 5
[1][2]
[1][2]
Parameter
Conditions
Min
-
-
-
-
5.5
-
-
Typ
-
5
-
-
-
-
35
Max
5
100
10
14
9.5
50
45
Unit
V
nA
V
V
V
Ω
pF
[1]
[2]
Non-repetitive current pulse 8/20
µs
exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
Measures from pin 1 to pin 2.
PESD5V0S1BA_BB_BL_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 20 August 2009
5 of 15
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
