SSFM3008L
30V N-Channel MOSFET
Main Product Characteristics
V
DSS
R
DS
(on)
I
D
30V
5.0mohm(typ.)
50A
Marking and Pin
Schematic Diagram
Assignment
SSFM3008L
SSFM3008
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications.
Absolute Max Rating
Symbol
I
D
@ TC = 25°C
I
D
@ TC = 100°C
I
DM
P
D
@TC = 25°C
V
DS
V
GS
E
AS
I
AS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V①
Continuous Drain Current, V
GS
@ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
50
40
200
100
0.55
30
± 20
100
44
-55 to + 175
W
W/°C
V
V
mJ
A
°C
A
Units
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Page 1 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristics
Junction-to-case③
Junction-to-ambient (t ≤ 10s)
④
Junction-to-Ambient (PCB mounted, steady-state)
④
Typ.
—
—
—
Max.
1.5
45
20
Units
℃/W
℃/W
℃/W
Electrical Characteristics
@T
A
=25℃
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
30
—
—
1
—
—
unless otherwise specified
Typ.
36.5
5.0
7.5
—
—
—
—
35
7.9
8.7
11.5
46.5
25.8
6.5
2055
356
226
Max.
—
8
10
3
10
100
—
—
—
—
—
—
—
—
—
—
—
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1MHz
ns
V
GS
=10V, VDS=15V,
R
GEN
=3Ω, I
D
=20A
nC
Units
V
mΩ
mΩ
V
μA
nA
Conditions
V
GS
= 0V, ID = 250μA
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=10A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 30V,V
GS
= 0V
V
GS
=20V
V
GS
= -20V
V
DS
=15V,
I
D
=20A,
V
GS
=10V
-100
—
—
—
—
—
—
—
—
—
—
Source-Drain Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Min.
—
Typ.
—
Max.
50
Units
A
Conditions
MOSFET symbol
showing the
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
0.5
12.4
11.7
200
1.0
—
—
A
V
ns
nC
integral reverse
p-n junction diode.
I
S
=1.0A, V
GS
=0V
T
J
= 25°C, I
F
=20A, di/dt
= 300A/μs
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Page 2 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The
maximum current rating is limited by bond-wires.
②Repetitive
rating; pulse width limited by max. junction temperature.
③The
power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The
value of
R
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These
curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of T
J(MAX)
=175°C.
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Page 3 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Typical Electrical Characteristics
100
10V
6V
4.5V
100
90
ID,drain current(A)
ID,drain current(A)
80
60
40
7V
80
70
60
50
40
30
20
10
0
VDS=5V
4V
3.5V
20
0
0
1
2
3
4
5
VDS,drain to source voltage(V)
125℃
25℃
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics
30
IS,source to drain current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
Figure 2: Typical Transfer Characteristics
1.E+02
25
20
15
10
5
0
2
3
4
5
ID=30A
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD,source to drain voltage(V)
1
1.1
125℃
125℃
25℃
25℃
6
7
8
9
10
VGS,gate to source voltage(V)
Figure 3: On-Resistance vs. Gate-Source
Voltage
10
VGS,gate to source voltage(V)
Figure 4: Body-Diode Characteristics
3000
2500
Capacitance (pF)
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
QG,gate charge(nC)
2000
1500
1000
500
0
0
5
10
15
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
Coss=Cds+Cgd
Crss=Cgd
Ciss
VDS=15V
ID=20A
Coss
Crss
20
25
VDS, drain to source voltage(V)
Figure 5: Gate-Charge Characteristics
Figure 6: Capacitance Characteristics
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Page 4 of 7
Rev.1.0
SSFM3008L
30V N-Channel MOSFET
Typical Thermal Characteristics
1000
200
180
ID,drain current(A)
100
160
Tj(max)=175℃
Ta=25℃
10uS
Power ( W)
Ron limited
10
140
120
100
80
60
40
20
0
0.0001
100uS
DC
1mS
10mS
Tj(max)=175℃ Tc=25℃
1
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
VDS,drain to source voltage(V)
Pulse Width (s)
Figure 7: Maximum Forward Biased Safe
Operating Area
60
Power Dissipation (W)
Figure 8: Single Pulse Power Rating
Junction-to-Case
60
50
40
30
20
10
0
40
30
20
10
0
0
25
50
75
100
125
150
175
TCASE (°C)
ID,d rain c urren t(A)
50
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 9: Power De-rating
Figure 10: Current De-rating
ZθJC,Transient Thermal
Resistance( Normalized
)
10
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
t
t
p
D=t
p
/t
1
0.1
0.01
0.00001
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Figure 11: Normalized Thermal transient Impedance Curve
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Page 5 of 7
Rev.1.0
嵌入式系统
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