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VSUD360CW40

产品描述510 A, 400 V, SILICON, RECTIFIER DIODE, TO-244AB
产品类别分立半导体    二极管   
文件大小143KB,共7页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

VSUD360CW40概述

510 A, 400 V, SILICON, RECTIFIER DIODE, TO-244AB

VSUD360CW40规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码TO-244
包装说明ROHS COMPLIANT PACKAGE-2
针数2
Reach Compliance Codecompli
ECCN代码EAR99
其他特性SNUBBER DIODE
应用ULTRA FAST SOFT RECOVERY HIGH POWER
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.96 V
JEDEC-95代码TO-244
JESD-30 代码R-XUFM-X2
最大非重复峰值正向电流1200 A
元件数量2
相数1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流510 A
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散570 W
认证状态Not Qualified
最大重复峰值反向电压400 V
最大反向恢复时间0.069 µs
表面贴装NO
端子形式UNSPECIFIED
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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VSUD360CW40
Vishay Semiconductors
FRED Pt
®
Ultrafast Soft Recovery Diode Module, 360 A
FEATURES
• Very low Q
rr
and t
rr
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
TO-244
• Higher frequency operation
• Reduced snubbing
PRODUCT SUMMARY
I
F(AV)
V
R
Q
rr
(typical)
t
rr
Type
360 A
400 V
1250 nC
40 ns
Modules - Diode, FRED Pt
®
DESCRIPTION
FRED Pt
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for HF
welding, power converters and other applications where
switching losses are a significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
V
R
T
C
= 25 °C
Continuous forward current per diode
I
F(AV)
I
FSM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 110 °C
T
C
= 85 °C
T
C
= 116 °C
Single pulse forward current per diode
Maximum power dissipation
Operating junction and storage
temperatures
TEST CONDITIONS
MAX.
400
510
305
180
1200
570
180
- 40 to 150
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 180 A
Forward voltage
V
FM
I
F
= 360 A
I
F
= 180 A, T
J
= 175 °C
I
F
= 360 A, T
J
= 175 °C
Reverse leakage current
Series inductance
I
RM
L
S
T
J
= 150 °C, V
R
= V
R
rated
From top of terminal hole to mounting plane
MIN.
400
-
-
-
-
-
-
TYP.
-
1.09
1.23
0.88
1.04
0.26
5
MAX.
-
1.27
1.50
0.96
1.18
1.28
-
mA
nH
V
UNITS
Document Number: 93116
Revision: 20-Sep-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

VSUD360CW40相似产品对比

VSUD360CW40 VSUD360CW40_10
描述 510 A, 400 V, SILICON, RECTIFIER DIODE, TO-244AB 510 A, 400 V, SILICON, RECTIFIER DIODE, TO-244AB

 
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