VSMG2700
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength:
λ
p
= 830 nm
• High reliability
• High radiant power
94 8553
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: f
c
= 18 MHz
• Good spectral matching with Si photodetectors
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
requirements at:
www.vishay.com/applications
DESCRIPTION
VSMG2700 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a PLCC-2 package for surface
mounting (SMD).
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
VSMG2700
I
e
(mW/sr)
10
ϕ
(deg)
± 60
λ
p
(nm)
830
t
r
(ns)
20
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSMG2700-GS08
VSMG2700-GS18
Note
MOQ: minimum order quantity
PACKAGING
Tape and reel
Tape and reel
REMARKS
MOQ: 7500 pcs, 1500 pcs/reel
MOQ: 8000 pcs, 8000 pcs/reel
PACKAGE FORM
PLCC-2
PLCC-2
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number: 81472
Rev. 1.3, 03-Nov-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
307
VSMG2700
Vishay Semiconductors
High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
200
180
120
100
80
60
TEST CONDITION
SYMBOL
V
R
I
F
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
250
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
=
100 μs
t
p
= 100 μs
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
Acc. figure 8, J-STD-020
J-STD-051, soldered on PCB
T
sd
R
thJA
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70 80
90 100
R
thJA
= 250 K/W
I
F
- Forward Current (mA)
R
thJA
= 250 K/W
40
20
0
0
10
20 30 40
50 60 70 80
90 100
21339
T
amb
- Ambient Temperature (°C)
21340
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
www.vishay.com
308
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81472
Rev. 1.3, 03-Nov-09
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
f
c
d
6
125
10
100
40
- 0.35
± 60
830
40
0.25
20
20
18
0.44
22
MIN.
TYP.
1.5
2.3
- 1.8
10
MAX.
1.8
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
VSMG2700
High Speed Infrared Emitting Diode,
Vishay Semiconductors
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
1.25
10 000
t
p
/T = 0.005
T
amb
< 60 °C
Φ
e, rel
- Relative Radiant Power
I
F
- Forward Current (mA)
0.01
1000
0.02
0.05
100
0.2
0.5
DC
10
0.1
1.0
0.75
0.5
0.25
1
0.01
95 9985
0.1
1
10
100
16972_1
0
740
800
λ-
Wavelength (nm)
900
t
p
- Pulse Length (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Relative Radiant Power vs. Wavelength
0°
1000
10°
20°
30°
I
e, rel
- Relative Radiant Intensity
I
F
- Forward Current (mA)
100
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
t
p
= 100 µs
10
t
p
/T = 0.001
1
0
18873_1
1
2
3
4
94 8013
V
F
- Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
100
I
e
- Radiant Intensity (mW/sr)
10
t
p
= 1 µs
1
0.1
1
18874
10
100
1000
I
F
- Forward Pulse Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 81472
Rev. 1.3, 03-Nov-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
309
ϕ
- Angular Displacement
VSMG2700
Vishay Semiconductors
High Speed Infrared Emitting Diode,
830 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS
in millimeters
3.5
± 0.2
1.75
± 0.1
technical drawings
according to DIN
specifications
Pin identification
0.9
Mounting Pad Layout
1.2
area covered with
solder resist
2.8
± 0.15
C
A
2.6 (2.8)
2.2
4
Ø 2.4
3
+ 0.15
1.6 (1.9)
Drawing-No.: 6.541-5067.01-4
Issue: 5; 04.11.08
20541
SOLDER PROFILE
DRYPACK
300
250
255 °C
240 °C
217 °C
max. 260 °C
245 °C
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature (°C)
200
max. 30 s
150
max. 120 s
100
50
0
0
50
100
150
200
250
300
max. ramp up 3 °C/s max. ramp down 6 °C/s
max. 100 s
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
amb
< 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
Time (s)
19841
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
www.vishay.com
310
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81472
Rev. 1.3, 03-Nov-09
4
VSMG2700
High Speed Infrared Emitting Diode,
Vishay Semiconductors
830 nm, GaAlAs Double Hetero
TAPE AND REEL
PLCC-2 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
4.5
3.5
Adhesive tape
120°
10.0
9.0
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
63.5
60.5
Blister tape
Component cavity
180
178
14.4 max.
94 8665
94 8670
Fig. 9 - Blister Tape
Fig. 12 - Dimensions of Reel-GS08
2.2
2.0
3.5
3.1
120°
5.75
5.25
3.6
3.4
1.85
1.65
10.4
8.4
4.0
3.6
8.3
7.7
4.5
3.5
2.5
1.5
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
13.00
12.75
62.5
60.0
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
0.25
94 8668
Fig. 10 - Tape Dimensions in mm for PLCC-2
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
De-reeling direction
94 8158
321
329
14.4 max.
18857
Fig. 13 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
> 160 mm
40 empty
compartments
min. 75 empty
compartments
Tape leader
Carrier leader
Carrier trailer
Fig. 11 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
Document Number: 81472
Rev. 1.3, 03-Nov-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
311
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