VSKDS201/045
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 100 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL pending
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• High surge capability
100 A
PRODUCT SUMMARY
I
F(AV)
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
The VSKDS201.. Schottky rectifier doubler module has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
100 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
100
45
8600
0.69
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VSKDS201/045
45
UNITS
V
Document Number: 93234
Revision: 18-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
VSKDS201/045
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 100 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current per leg
Maximum peak one cycle non-repetitive
surge current
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 24 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
TEST CONDITIONS
50 % duty cycle at T
C
= 123 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
VALUES
100
8600
1850
270
20
mJ
A
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
100 A
Maximum forward voltage drop
V
FM
200 A
100 A
200 A
Maximum reverse leakage current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Maximum RMS insulation voltage
I
RM
C
T
L
S
dV/dt
V
INS
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.72
1.04
0.69
0.98
10
90
5200
7.0
10 000
3000 (1 min)
3600 (1 s)
mA
pF
nH
V/μs
V
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
50 Hz
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Approximate weight
to heatsink
Mounting torque ± 10 %
busbar
Case style
A mounting compound is recommended and the torque
should be rechecked after a period of 3 hours to allow for
the spread of the compound.
JEDEC
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
TEST CONDITIONS
VALUES
- 55 to 175
0.52
°C/W
0.1
75
2.7
4
Nm
3
TO-240AA compatible
g
oz.
UNITS
°C
www.vishay.com
2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93234
Revision: 18-May-10
VSKDS201/045
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 100 A
I
F
- Instantaneous Forward Current (A)
1000
1000
T
J
= 175 °C
I
R
- Reverse Current (mA)
100
10
1
0.1
0.01
0.001
T
J
= 25 °C
T
J
= 175 °C
100
T
J
= 125 °C
10
T
J
= 25 °C
T
J
= 125 °C
1
0
0.5
1.0
1.5
2.0
2.5
5
93234_02
10
15
20
25
30
35
40
45
93234_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
93234_03
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
DC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
93234_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 93234
Revision: 18-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
VSKDS201/045
Vishay Semiconductors
180
160
140
120
100
80
60
40
20
0
0
93234_05
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 100 A
120
Allowable Case Temperature (°C)
Average Power Loss (W)
100
80
60
40
20
0
RMS limit
DC
Square
wave (D = 0.50)
Rated V
R
applied
See
note (1)
50
100
150
200
250
300
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
0
93234_06
20
40
60
80
100
120
140
160
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and with rated V
RRM
applied
following surge
1000
10
100
1000
10 000
93234_07
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
www.vishay.com
4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93234
Revision: 18-May-10
VSKDS201/045
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 100 A
ORDERING INFORMATION TABLE
Device code
VS
1
KD
2
S
3
20
4
1
5
/
045
6
1
2
3
4
5
6
-
-
-
-
-
-
Vishay HPP
Circuit configuration:
KD = ADD-A-PAK - 2 diodes in series
S = Schottky diode
Average current rating (20 = 200 A)
Product silicon identification
Voltage rating (045 = 45 V)
CIRCUIT CONFIGURATION
(1)
~
(2)
+
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95369
Document Number: 93234
Revision: 18-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
