TS921
Rail-to-Rail High Output Current
Single Operational Amplifier
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■
■
■
■
■
■
Rail-to-rail input and output
Low noise: 9nV/√Hz
Low distortion
High output current: 80mA (able to drive 32Ω
loads)
High-speed: 4MHz, 1V/
µ
s
Operating from 2.7V to 12V
ESD internal protection: 1.5kV
Latch-up immunity
Macromodel included in this specification
N
DIP8
(Plastic Package)
D
SO-8
(Plastic Micropackage)
P
TSSOP8
(Thin Shrink Small Outline Package)
Description
The TS921 is a rail-to-rail single BiCMOS
operational amplifier optimized and fully specified
for 3V and 5V operation.
Its high output current
impedances to be driven.
allows
low-load
Pin connections (top view)
N.C.
Inverting Input
Non-inverting Input
VCC
1
2
3
4
-
+
The TS921 exhibits very low noise, low distortion
and low offset. It has a high output current
capability which makes this device an excellent
choice for high quality, low voltage or battery-
operated audio systems.
The device is stable for capacitive loads up to
500pF.
8 N.C.
7 VCC
+
6 Output
5 N.C.
Applications
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Headphone amplifier
Piezoelectric speaker driver
Sound cards, multimedia systems
Line driver, actuator driver
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Servo amplifier
Mobile phone and portable communication
sets
Instrumentation with low noise as key factor
November 2005
Rev 3
1/14
www.st.com
14
TS921
Order Codes
Part Number
TS921IN
TS921ID/IDT
-40°C, +125°C
TS921IPT
TS921IYD/IYDT
Temperature
Range
Package
DIP8
SO-8
TSSOP8
(Thin Shrink Outline Package)
SO-8 (automotive grade level)
Packing
Tube
Tube or Tape & Reel
921I
Tape & Reel
Tube or Tape & Reel
921IY
Marking
TS921IN
2/14
TS921
Absolute Maximum Ratings
1
Absolute Maximum Ratings
Table 1.
Symbol
V
CC
Vid
V
i
T
stg
T
j
R
thja
Key parameters and their absolute maximum ratings
Parameter
Supply voltage
(1)
Differential Input Voltage
(2)
Input Voltage
Storage Temperature
Maximum Junction Temperature
SO-8
Thermal Resistance Junction to
TSSOP8
Ambient
DIP8
SO-8
Thermal Resistance Junction to
TSSOP8
Case
DIP8
HBM
Human Body Model
(3)
Condition
Value
14
±1
V
DD
-0.3 to V
CC
+0.3
-65 to +150
150
125
120
85
40
37
41
1.5
Unit
V
V
V
°C
°C
°C/W
R
thjc
°C/W
kV
ESD
Electro-Static Discharge
MM
Machine Model
(4)
CDM
Charged Device Model
100
1.5
see note
(5)
200
V
kV
Output Short Circuit Duration
Latch-up Immunity
10sec,
Standard package
Soldering Temperature
10sec,
Pb-free package
mA
°C
250
260
1. All voltage values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If Vid > ±1V,
the maximum input current must not exceed ±1mA. In this case (Vid > ±1V) an input serie resistor must be
added to limit input current.
3. Human body model, 100pF discharged through a 1.5kΩ resistor into pin of device.
4. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with
no external series resistor (internal resistor < 5Ω), into pin to pin of device.
5. There is no short-circuit protection inside the device: short-circuits from the output to V
cc
can cause excessive
heating. The maximum output current is approximately 80mA, independent of the magnitude of V
cc
. Destructive
dissipation can result from simultaneous short-circuits on all amplifiers.
Table 2.
Symbol
V
CC
V
icm
T
oper
Operating conditions
Parameter
Supply Voltage
Common Mode Input Voltage Range
Operating Free Air Temperature Range
Value
2.7 to 12
V
DD
-0.2 to V
CC
+0.2
-40 to +125
Unit
V
V
°C
3/14
Electrical Characteristics
TS921
2
Electrical Characteristics
Table 3.
Symbol
V
io
DV
io
I
io
I
ib
V
OH
V
OL
A
vd
Electrical characteristics for V
CC
= 3V, V
DD
= 0V, V
icm
= V
CC
/2, R
L
connected
to V
CC
/2, T
amb
= 25°C (unless otherwise specified)
Parameter
Input Offset Voltage
at T
min.
≤
T
amb
≤
T
max
Input Offset Voltage Drift
Input Offset Current
Input Bias Current
High Level Output Voltage
V
out
= 1.5V
V
out
= 1.5V
R
L
= 600Ω
R
L
= 32Ω
R
L
= 600Ω
R
L
= 32Ω
V
out
= 2V
pk-pk
R
L
= 600Ω
R
L
= 32Ω
35
16
4
1
60
V
CC
= 2.7 to 3.3V
60
50
0.7
R
L
= 600Ω, C
L
=100pF
R
L
= 600Ω, C
L
=100pF
f = 1kHz
V
out
= 2V
pk-pk
,
f = 1kHz, A
v
= 1,
R
L
= 600Ω
80
80
80
1.3
68
12
9
1.5
V/mV
2.87
2.63
100
180
2
1
15
30
100
Conditions
Min.
Typ.
Max.
3
5
Unit
mV
µV/°C
nA
nA
V
Low Level Output Voltage
mV
Large Signal Voltage Gain
GBP
I
CC
CMR
SVR
I
o
SR
Pm
GM
e
n
THD
Gain Bandwidth Product
Supply Current
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Short-Circuit Current
Slew Rate
Phase Margin at Unit Gain
Gain Margin
Equivalent Input Noise Voltage
Total Harmonic Distortion
R
L
= 600Ω
no load, V
out
= V
CC
/2
MHz
mA
dB
dB
mA
V/µs
Degrees
dB
nV
-----------
-
Hz
0.005
%
4/14
TS921
Table 4.
Symbol
V
io
DV
io
I
io
I
ib
V
OH
Electrical Characteristics
Electrical characteristics for V
CC
= 5V, V
DD
= 0V, V
icm
= V
CC
/2, R
L
connected
to V
CC
/2, T
amb
= 25°C (unless otherwise specified)
Parameter
Input Offset Voltage
at T
min.
≤
T
amb
≤
T
max
Input Offset Voltage Drift
Input Offset Current
Input Bias Current
High Level Output Voltage
R
L
= 600Ω
R
L
= 32Ω
V
OL
A
vd
Low Level Output Voltage
R
L
= 600Ω
R
L
= 32Ω
V
out
= 2V
pk-pk
R
L
= 600Ω
R
L
= 32Ω
GBP
I
CC
CMR
SVR
I
o
SR
Pm
GM
e
n
THD
Gain Bandwidth Product
Supply Current
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Short-Circuit Current
Slew Rate
Phase Margin at Unit Gain
Gain Margin
Equivalent Input Noise Voltage
Total Harmonic Distortion
R
L
= 600Ω, C
L
=100pF
R
L
= 600Ω, C
L
=100pF
f = 1kHz
V
out
= 2V
pk-pk
, f = 1kHz,
A
v
= 1, R
L
= 600Ω
V
CC
= 4.5to 5.5V
R
L
= 600Ω
no load, V
out
= V
CC
/2
60
60
50
0.7
35
16
4
1
80
80
80
1.3
68
12
9
0.005
1.5
V/mV
V
out
= 1.5V
V
out
= 1.5V
4.85
4.4
120
300
2
1
15
30
100
Conditions
Min.
Typ.
Max.
3
5
Unit
mV
µV/°C
nA
nA
V
mV
Large Signal Voltage Gain
MHz
mA
dB
dB
mA
V/µs
Degrees
dB
nV
-----------
-
Hz
%
5/14
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