TS8MED3260G
32MB 72-PIN EDO
SIMM With 16Mx8 3.3VOLT
Features
•
•
•
•
•
Fast Page Mode with Extended Data Out
Single +5.0V
±
10% power supply.
2,048 cycles refresh.
Lower power consumption.
CAS before RAS refresh, RAS only refresh, Hidden
refresh, Fast Page Mode with EDO, Read_Modify_Write
capability.
•
Description
The TS8MED3260G is a 8M by 32-bit dynamic RAM
module with 16 pcs of 4Mx4 DRAMs assembled on the
printed circuit board.
The TS8MED3260G is optimized for application to
systems which require high density and large capacity
along with compact sizing.
Placement
DRAM Status : GM71C17403CJ-60
M5M417405CJ-6
NT5117405BJ-60
B
C
HM5117405S-6
TS8MED3260G
Access time from /RAS
t
RAC
Access time from /CAS
t
CAC
Random read/write cycle time
t
RC
Hyper page mode cycle time
t
HPC
60ns
15ns
104ns
25ns
A
Dimensions
Side
A
D
C
B
B
C
D
G
F
E
H
E
F
G
H
Millimeters
107.95
±
0.500
6.35
3.38
2.03
21.60
±
0.500
10.16
6.35
1.27
±
0.080
Inches
4.520
±
0.020
0.250
0.133
0.080
0.850
±
0.020
0.400
0.250
0.050
±
0.003
Transcend Information Inc.
TS8MED3260G
32MB 72-PIN EDO
SIMM With 16Mx8 3.3VOLT
TS8MED3260G-- Block Diagram
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
DQ28
DQ29
DQ30
DQ31
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
DQ0
DQ1
DQ2
DQ3
D3
D2
D1
D0
DQ4
DQ5
DQ6
DQ7
D3
D2
D1
D0
D3
D2
D1
D0
D3
D2
D1
D0
D3
D2
D1
D0
D3
D2
D1
D0
A0-A10
/RAS0
/CAS0
/WE
/CAS1
/RAS2
/CAS2
/CAS3
/RAS3
A0-A10
/RAS
/CAS
/WE
A0-A10
/RAS
/CAS
/WE
A0-A10
/RAS
/CAS
/WE
A0-A10
/RAS
/CAS
/WE
A0-A10
/RAS
/CAS
/WE
A0-A10
/RAS
/CAS
/WE
/RAS1
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
A0-A10
/RAS
/CAS
/WE
D3
D2
D1
D0
Pinouts
Pin
No
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Pin
Name
Vss
DQ0
DQ16
DQ1
DQ17
DQ2
DQ18
DQ3
DQ19
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ20
DQ5
DQ21
DQ6
Pin
No
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Pin
Name
DQ22
DQ7
DQ23
A7
NC
Vcc
A8
A9
/RAS3
/RAS2
NC
NC
NC
NC
Vss
/CAS0
/CAS2
/CAS3
/CAS1
/RAS0
/RAS1
NC
/WE
NC
Pin
No
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Name
DQ8
DQ24
DQ9
DQ25
DQ10
DQ26
DQ11
DQ27
DQ12
DQ28
Vcc
DQ29
DQ13
DQ30
DQ14
DQ31
DQ15
NC
PD1
PD2
PD3
PD4
NC
Vss
Pin Identification
Symbol
A0 ~ A10
DQ0 ~ DQ31
/RAS0 ~ /RAS3
/CAS0 ~ /CAS3
/WE
Vcc
Vss
NC
PD1 ~ PD4
Function
Address inputs
Common data inputs/outputs
Row address strobes
Column address strobes
Write enable
+5.0 Volt power supply
Ground
No connection
Presence detection pin
This technical information is based on industry standard data and tests believed to be reliable. However , Transcend makes no warranties, either
expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the right to make
changes in specifications at any time without prior notice.
Transcend Information Inc.
TS8MED3260G
32MB 72-PIN EDO
SIMM With 16Mx8 3.3VOLT
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
cc
supply to Vss
Storage temperature
Power dissipation
Short circuit current
Note:
Symbol
V
IN
, V
OUT
V
cc
T
STG
P
D
I
OS
Value
-1.0~+7.0
-1.0~+7.0
-55~+150
16
50
Unit
V
V
°C
W
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device
reliability.
RECOMMENDED OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to Vss , T
A
= 0 to 70)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
V
cc
V
ss
V
IH
V
IL
Min
4.5
0
2.4
-1.0*
2
Typ
5.0
0
-
-
Max
5.5
0
Vcc+1*
0.8
1
Unit
V
V
V
V
Note:
1. V
cc
+2.0V/20ns, Pulse width is, measured at V
cc
.
2. -2.0V/20ns, Pulse width is measured at V
cc
.
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
I(L)
I
O(L)
V
OH
Min
-
-
-
-
-
-
-80
-10
2.4
Max
816
32
816
816
16
816
80
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
uA
uA
V
V
-
V
OL
I
CC1
: Operating Current* (/RAS, /CAS, Address cycling @t
RC
=min)
I
CC2
: Standby Current (/RAS=/CAS=/W=V
IH
)
Transcend Information Inc.
TS8MED3260G
32MB 72-PIN EDO
SIMM With 16Mx8 3.3VOLT
I
CC3
: /RAS only Refresh Current* (/CAS=V
IH
, /RAS cycling @t
RC
=min)
I
CC4
: Fast Page Mode Current* (/RAS=V
IL
, /CAS Address cycling: t
PC
=min)
I
CC5
: Standby Current (/RAS=/CAS=/W=VCC-0.2V)
I
CC6
: /CAS-Before-/RAS Refresh Current* (/RAS and /CAS cycling @t
RC
=min)
L
I(L)
: Input Leakage Current (Any input 0VINV
CC
+0.5V, all other pins not under test=0V)
I
O(L)
:
Output Leakage Current (Data Out is disabled, 0VV
OUT
V
CC
)
V
OH
: Output High Voltage Level (I
OH
= -5mA)
V
OL
: Output Low Voltage Level (I
OL
=4.2mA)
Note: I
CC1
,
I
CC3
,
I
CC4
and
I
CC6
are dependent on output loading and cycle rates. Specified values are
obtained with the output open.
I
CC
is specified as an average current. In
I
CC1
and
I
CC3
, address can be
changed maximum once while /RAS=V
IL
. In
I
CC4
, address can be changed maximum once within one
mode cycle, t
PC
.
CAPACITANCE
(TA = 25°C, Vcc = 5V, f = 1MHz)
Item
Input capacitance (A
0
~A
10
)
Input capacitance (/WE)
Input capacitance (/RAS0, /RAS2)
Input capacitance (/CAS0~/CSA3)
Data input/output capacitance (DQ0~DQ31)
Symbol
C
IN1
C
IN2
C
IN3
C
IN4
C
DQ
Min
-
-
-
-
-
Max
100
130
35
30
20
Unit
pF
pF
pF
pF
pF
AC CHARACTERISTICS
(0TA70, Vcc=5.0V %, See notes 1, 2)
Test condition: V
IH
/V
IL
=2.4V/0.8V, V
OH
/V
OL
=2.4V/0.4V, Output loading CL=100pF
Parameter
Random read or write cycle time
Access time from /RAS
Access time from /CAS
Access time from column address
/CAS to output in Low-Z
Output buffer turn-off delay
Transition time (rise and fall)
/RAS precharge time
/RAS pulse width
/RAS hold time
/CAS hold time
/CAS pulse width
/RAS to /CAS delay time
Symbol
t
RC
t
RAC
t
CAC
t
CLZ
t
RC
t
OFF
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
0
0
3
40
60
15
60
10
20
10K
45
10K
15
50
Min
110
60
15
30
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
3,4
3,4,5
3,10
3
6
2
Note
Transcend Information Inc.
TS8MED3260G
/RAS to column address delay time
/CAS to /RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to /RAS lead time
Read command set-up time
Read command hold referenced to /CAS
Read command hold referenced to /RAS
Write command hold time
Write command pulse width
Write command to /RAS lead time
Write command to /CAS lead time
Date-in set-up time
Date-in hold time
Refresh period
Write command set-up time
/CAS setup time (/CAS-before-/RAS referesh)
/CAS hold time (/CAS-before-/RAS referesh)
/RAS precharge to /CAS hold time
Access time from /CAS precharge
Fast page mode cycle time
/CAS precharge time (Fast page cycle)
/RAS pulse width (Fast page cycle)
/W to /RAS precharge time (C-B-R refresh)
/W to /RAS hold time (C-B-R refresh)
/CAS precharge (C-B-R counter test)
Hold time /CAS low to /CAS high
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
REF
t
WCS
t
CSR
t
CHR
t
RPC
t
CPA
t
PC
t
CP
t
RASP
t
WRP
t
WRH
t
CPT
t
CLCH
40
10
60
10
10
20
5
0
5
10
5
15
5
0
10
0
10
30
0
0
0
10
10
15
10
0
10
32MB 72-PIN EDO
SIMM With 16Mx8 3.3VOLT
30
ns
ns
ns
ns
ns
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
32
ns
ns
ns
ns
ns
35
ns
ns
ns
200K
ns
ns
ns
ns
ns
11
3
7
9
9
8
8
Transcend Information Inc.
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