T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
Power Rectifier Diodes (T-Modules), 40 A to 110 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 V
RRM
• 3500 V
RMS
isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
D-55
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
Type
40 A to 110 A
Modules - Diode, High Voltage
These series of T-modules use standard recovery power
rectifier diodes. The semiconductors are electrically isolated
from the metal base, allowing common heatsink and
compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
50 Hz
I
FSM
60 Hz
50 Hz
60 Hz
I
2
√t
V
RRM
T
J
CHARACTERISTICS
T40HF
40
T
C
85
63
570
600
1630
1500
16 300
T70HF
70
85
110
1200
1250
7100
6450
70 700
T85HF
85
85
134
1700
1800
14 500
13 500
148 700
T110HF
110
85
173
2000
A
2100
20 500
18 600
204 300
A
2
√s
V
°C
A
2
s
UNITS
A
°C
A
I
2
t
100 to 1200
- 40 to 150
Document Number: 93587
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
T40HF...
T70HF...
T85HF...
T110HF...
40
60
80
100
120
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
150
300
500
700
900
1100
1300
100
I
RRM
MAXIMUM
AT T
J
= 25 °C
μA
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive
surge current
t = 8.3 ms
I
FSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√t
for fusing
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
forward slope resistance
High level value of
forward slope resistance
Maximum forward voltage drop
I
2
√t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
TEST CONDITIONS
180° conduction, half sine wave
85
63
570
600
480
500
1630
1500
1150
1050
85
110
1200
1250
1000
1050
7100
6450
5000
4570
85
134
1700
1800
1450
1500
14 500
13 500
10 500
9600
85
173
2000
2100
A
1700
1780
20 500
18 600
14 500
13 200
A
2
√s
A
2
s
°C
A
T40HF T70HF
40
70
T85HF
85
T110HF UNITS
110
A
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
),
T
J
maximum
(I >
π
x I
F(AV)
), T
J
maximum
(16.7 % x
π
x I
F(AV)
< I <
π
x I
F(AV)
),
T
J
maximum
(I >
π
x I
F(AV)
), T
J
maximum
I
FM
=
π
x I
F(AV)
, T
J
= 25 °C,
t
p
= 400 μs square pulse
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
16 300 70 700 148 700 204 300
0.66
0.84
4.3
3.1
0.76
0.95
2.4
1.7
0.68
0.90
1.76
1.08
0.68
V
0.86
1.56
mΩ
1.12
V
FM
1.30
1.35
1.27
1.35
V
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93587
Revision: 20-May-10
T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
RMS isolation voltage
SYMBOL
I
RRM
V
ISOL
T
J
= 150 °C
50 Hz, circuit to base, all terminals shorted
T
J
= 25 °C, t = 1 s
TEST CONDITIONS
T40HF T70HF T85HF T110HF UNITS
15
3500
15
3500
20
3500
20
3500
mA
V
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque,
± 10 %
Approximate weight
Case style
to heatsink
terminals
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface smooth, flat
and greased
Non-lubricated
threads
M3.5 mounting screws
(1)
M5 screw terminals
1.36
TEST CONDITIONS
VALUES
T40HF T70HF T85HF T110HF
- 40 to 150
0.69
0.2
1.3 ± 10 %
Nm
3 ± 10 %
54
T-module (D-55)
g
0.62
0.47
K/W
UNITS
°C
See dimensions - link at the end of datasheet
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
ΔR
CONDUCTION PER JUNCTION
DEVICES
T40HF...
T70HF...
T85HF...
T110HF...
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.12
0.09
0.08
0.05
120°
0.14
0.11
0.09
0.07
90°
0.18
0.14
0.12
0.09
60°
0.27
0.20
0.18
0.14
30°
0.46
0.35
0.31
0.23
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.09
0.07
0.06
0.05
120°
0.15
0.11
0.10
0.08
90°
0.20
0.15
0.13
0.10
60°
0.28
0.21
0.19
0.15
30°
0.46
0.35
K/W
0.31
0.24
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Document Number: 93587
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
70
60
0
10
20
30
40
50
60
70
Average F
orward Current (A)
30°
60°
90°
120°
180°
DC
Conduc tion Period
Maximum Allowable Cas T
e emperature (°C)
150
140
130
120
110
100
90
80
70
60
0
10
T
40HF S
.. eries
R
thJC
(DC) = 1.36 K/ W
T
40HF S
.. eries
R
thJC
(DC) = 1.36 K/ W
Conduction Angle
30°
60°
90°
120°
180°
20
30
40
50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
Average F
orward Current (A)
Maximum Allowable Ambient T
emperature (°C)
180°
120°
90°
60°
30°
RMS Limit
5K
/W
5
1.
W
K/
R
th
1
2
3
W
K/
K/
W
A
S
W
K/
.5
=0
K/
W
e lt
-D
a
R
7K
/W
Conduc tion Angle
10
K/ W
T
40HF S
.. eries
T
J
= 150°C
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Pow er Loss (W)
70
60
50
40
30 RMSLimit
20
10
0
0
10
20
30
40
50
60
0
70
25
50
75
100
125
150
Average F
orward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Conduc tion Period
DC
180°
120°
90°
60°
30°
R
th
A
S
1
1.
5
K/
W
K/
W
=
5
0.
W
K/
ta
el
-D
2K
/W
R
3K
/W
5 K/
7 K/
W
W
T
40HF S
.. eries
T
J
= 150°C
10 K/ W
Fig. 4 - Forward Power Loss Characteristics
www.vishay.com
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93587
Revision: 20-May-10
T40HF..., T70HF..., T85HF..., T110HF... Series
Power Rectifier Diodes
(T-Modules), 40 A to 110 A
Maximum Allowable Cas T
e emp erature (°C)
Vishay Semiconductors
Peak Ha lf S Wave Forw ard Current (A)
ine
550
500
450
400
350
300
250
200
150
1
150
140
130
120
110
100
90
80
70
60
0
10
20
30
40
50
60
70
80
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Angle
At Any Ra ted Loa d Cond ition And With
Rated V
RRM
App lied Following S
urge.
Initial T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T
70HF S
.. eries
R
thJC
(DC) = 0.69 K/ W
T
40HF.. S
eries
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Current Ratings Characteristics
550
500
450
400
350
300
250
200
150
100
0.01
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T
J
= 150°C
No Voltage R
eapplied
R
ated V
RRM
R
eapplied
Maximum Allowable Case T
emperature (°C)
Peak Half S
ine Wave F
orward Current (A)
600
150
140
130
120
110
100
90
80
70
60
0
20
40
60
80
100
120
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
Conduc tion Period
T
70HF.. S
eries
R
thJC
(DC) = 0.69 K/ W
T
40HF S
.. eries
0.1
Pulse T
rain Duration (s)
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
0
25
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduc tion Angle
180°
120°
90°
60°
30°
RMS Limit
=
A
hS
R
t
W
K/
5
0.
1K
/W
1.5
K/
W
2K
/W
3K
/W
5 K/
W
7
0.
W
K/
0.3
W
K/
ta
el
-D
R
T
70HF.. S
eries
T
J
= 150°C
7 K/ W
Fig. 9 - Forward Power Loss Characteristics
Document Number: 93587
Revision: 20-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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