SUR50N03-16P
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.016 @ V
GS
= 10 V
0.024 @ V
GS
= 4.5 V
I
D
(A)
a
15
12
D
TrenchFETr Power MOSFET
D
PWM Optimized
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
−
High-Side
D
Synchronous Rectifiers
TO-252
Reverse Lead DPAK
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUR50N03-16P—E3
SUR50N03-16P-T4—E3 (altrenate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25_C
Continuous Drain Current
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
T
A
= 25_C
T
A
= 100_C
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
I
D
Symbol
V
DS
V
GS
Limit
30
"20
36
15
10.6
40
5
25
31.25
40.8
6.5
a
−55
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
18
40
3.0
Maximum
23
50
3.7
Unit
_C/W
C/W
1
SUR50N03-16P
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain Source On State
Drain-Source On-State
Forward
Resistance
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 10 A
Transconductance
b
V
DS
= 15 V, I
D
= 20 A
10
0.019
40
0.0128
0.016
0.025
0.024
S
W
30
1.0
3.0
"100
1
50
V
nA
mA
A
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Charge
c
Charge
c
Gate-Source
Gate-Drain
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.3
W
I
D
^
50 A, V
GEN
= 10 V, R
g
= 2.5
W
2.7
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 50 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1150
215
70
8.5
5
2.5
5.5
7
20
25
12
9.40
15
30
40
20
ns
W
13
nC
p
pF
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 20 A, V
GS
= 0 V
I
F
= 40 A, di/dt = 100 A/ms
1.0
25
40
1.5
70
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V
GS
= 10 thru 5 V
50
I D
−
Drain Current (A)
40
30
20
10
3V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
www.vishay.com
0
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
4V
I D
−
Drain Current (A)
50
40
30
20
10
60
Transfer Characteristics
T
C
= 125_C
25_C
−55_C
2
SUR50N03-16P
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
60
T
C
=
−55_C
r DS(on)
−
On-Resistance (
W
)
50
g fs
−
Transconductance (S)
25_C
40
125_C
30
20
10
0
0
5
10
15
20
25
30
0.04
0.05
Vishay Siliconix
On-Resistance vs. Drain Current
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.01
0.00
0
10
20
30
40
50
60
I
D
−
Drain Current (A)
1500
I
D
−
Drain Current (A)
10
V
DS
= 15 V
I
D
= 50 A
Capacitance
C
iss
Gate Charge
1200
C
−
Capacitance (pF)
V GS
−
Gate-to-Source Voltage (V)
8
900
6
600
C
oss
C
rss
0
0
5
10
15
20
25
30
V
DS
−
Drain-to-Source Voltage (V)
4
300
2
0
0
3
6
9
12
15
18
Q
g
−
Total Gate Charge (nC)
2.1
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 15 A
I S
−
Source Current (A)
100
Source-Drain Diode Forward Voltage
r DS(on)
−
On-Resistance (
W
)
(Normalized)
1.8
1.5
T
J
= 150_C
10
T
J
= 25_C
1.2
0.9
0.6
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
V
SD
−
Source-to-Drain Voltage (V)
T
J
−
Junction Temperature (_C)
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
www.vishay.com
3
SUR50N03-16P
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
20
New Product
100
Limited
by r
DS(on)
10
I D
−
Drain Current (A)
Safe Operating Area
10
ms
100
ms
1 ms
10 ms
15
I D
−
Drain Current (A)
10
1
100 ms
1s
5
0.1
10 s
T
A
= 25_C
Single Pulse
dc, 100 s
0
0
25
50
75
100
125
150
175
T
A
−
Ambient Temperature (_C)
0.01
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
−4
10
−3
10
−2
10
−1
Square Wave Pulse Duration (sec)
1
10
100
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4
Document Number: 72775
S-32696—Rev. A, 19-Jan-04
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