SUP/SUB75N06-12L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.012 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
I
D
(A)
75
70
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP75N06-12L
SUB75N06-12L
N-Channel MOSFET
D S
Top View
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
P
D
T
J
, T
stg
Limit
60
"20
75
53
Unit
V
A
180
60
180
142
b
3.75
c
–55 to 175
W
_C
mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
www.vishay.com
S
FaxBack 408-970-5600
R
thJC
R
thJA
62.5
1.05
Symbol
Limit
40
Unit
_C/W
2-1
SUP/SUB75N06-12L
Vishay Siliconix
MOSFET SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
DS
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
D i S
O S
R i
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 4.5 V, I
D
= 30 A, T
J
= 175_C
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
60
0.0105
75
0.0085
0.012
0.019
0.024
0.014
0.0225
0.03
S
W
60
V
1
2
"100
1
50
150
A
mA
A
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.4
W
,
I
D
]
75 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 75 A
V
V
V
GS
= 0 V, V
DS
= 25 V f = 1 MH
V
V,
MHz
3170
550
170
59
10
13.5
9
8
77
20
20
20
ns
150
40
100
nC
C
pF
F
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 60 A di/d = 100 A/
A, di/dt
A/ms
I
F
= 75 A, V
GS
= 0 V
45
2
0.045
75
A
180
1.4
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
S
FaxBack 408-970-5600
2-2
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
SUP/SUB75N06-12L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
V
GS
= 10 thru 5 V
90
I
D
– Drain Current (A)
120
4V
80
I
D
– Drain Current (A)
120
Transfer Characteristics
160
60
30
T
C
= 125_C
25_C
–55_C
40
3V
2V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
100
T
C
= –55_C
r
DS(on)
– On-Resistance (
W
)
80
g
fs
– Transconductance (S)
25_C
60
0.017
0.020
On-Resistance vs. Drain Current
125_C
0.014
V
GS
= 4.5 V
V
GS
= 10 V
0.008
40
0.011
20
0
0
10
20
30
40
50
60
0.005
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
5000
20
Gate Charge
4000
C – Capacitance (pF)
C
iss
3000
V
GS
– Gate-to-Source Voltage (V)
16
V
DS
= 30 V
I
D
= 75 A
12
2000
8
1000
C
rss
0
0
12
24
C
oss
4
0
36
48
60
0
20
40
60
80
100
120
V
DS
– Drain-to-Source Voltage (V)
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
Q
g
– Total Gate Charge (nC)
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S
FaxBack 408-970-5600
2-3
SUP/SUB75N06-12L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
V
GS
= 10 V
I
D
= 30 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
I
S
– Source Current (A)
1.5
T
J
= 150_C
100
Source-Drain Diode Forward Voltage
1.0
10
T
J
= 25_C
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
100
300
Limited
by r
DS(on)
10
ms
Safe Operating Area
80
I
D
– Drain Current (A)
I
D
– Drain Current (A)
100
100
ms
60
40
10
1 ms
T
C
= 25_C
Single Pulse
20
10 ms
100 ms
dc
10
100
0
0
25
50
75
100
125
150
175
1
0.1
1
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–5
10
–4
10
–3
10
–2
10
–1
1
3
Square Wave Pulse Duration (sec)
www.vishay.com
S
FaxBack 408-970-5600
Document Number: 70807
S-59182—Rev. B, 07-Sep-98
2-4
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