SUP60N02-4m5P
Vishay Siliconix
N-Channel 20-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
20
r
DS(on)
(Ω)
0.0045 at V
GS
= 10 V
0.0065 at V
GS
= 4.5 V
I
D
(A)
a
60
60
FEATURES
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
100 % R
g
Tested
100 % UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• OR-ing
TO-220AB
D
DRAIN connected to TAB
G
G D S
Top View
Ordering Information:
SUP60N02-4m5P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
d
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
20
± 20
60
a
60
a
120
50
125
120
c
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
d
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
40
1.25
Unit
°C/W
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
www.vishay.com
1
SUP60N02-4m5P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain Charge
b
Gate Resistance
Turn-On Delay Time
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
b
a
Symbol
Test Conditions
Min.
20
1.0
Typ.
Max.
Unit
3
± 100
1
50
250
V
nA
µA
A
100
0.0036
0.0045
0.0068
0.008
0.0052
95
5950
0.0065
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM
Q
rr
V
DS
= 10 V, I
D
= 20 A
S
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
985
365
33
50
pF
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 50 A
0.75
V
DD
= 10 V, R
L
= 0.2
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 1.0
Ω
18
7
1.5
15
7
35
8
2.3
25
11
55
12
60
100
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
c
A
V
ns
A
µC
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, di/dt = 100 A/µs
0.85
45
1.7
0.039
1.5
90
3.4
0.155
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69821
S-80182-Rev. A, 04-Feb-08
SUP60N02-4m5P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
120
V
GS
= 10 thru 5
V
V
GS
= 4
V
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
90
120
80
60
60
T
C
= 25 °C
40
30
20
V
GS
= 3
V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
T
C
= 125 °C
T
C
= - 55 °C
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
200
T
C
= -55 °C
r
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
160
0.008
0.010
Transfer Characteristics
120
T
C
= 25 °C
0.006
V
GS
= 4.5
V
80
T
C
= 125 °C
0.004
V
GS
= 10
V
40
0.002
0
0
10
20
30
40
50
0
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.020
I
D
= 20 A
r
DS(on)
- On-Resistance (Ω)
0.016
C - Capacitance (pF)
6000
7500
On-Resistance vs. Drain Current
C
iss
0.012
4500
0.008
T
A
= 150 °C
3000
C
oss
1500
0.004
T
A
= 25 °C
0
0
2
4
6
8
10
0
0
C
rss
2
4
6
8
10
12
14
16
18
20
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
Capacitance
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3
SUP60N02-4m5P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
I
D
= 50 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 16
V
6
r
DS(on)
- On-Resistance
(Normalized)
V
DS
= 10
V
1.7
V
GS
= 10
V
1.4
V
GS
= 4.5
V
1.1
2.0
I
D
= 20 A
4
2
0.8
0
0
20
40
60
80
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
T
J
= 150 °C
10
I
S
- Source Current (A)
T
J
= 25 °C
1
V
GS(th)
Variance
(V)
0.0
0.5
On-Resistance vs. Junction Temperature
- 0.5
I
D
= 5 mA
0.1
- 1.0
0.01
I
D
= 250
µA
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 1.5
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
33
32
I
D
= 1 mA
Typical Drain-Source
Brakdown
Voltage
31
30
29
28
27
26
- 50
1
0.00001
100
Threshold Voltage
I
DAV
(A)
T
J
= 150 °C
10
T
J
= 25 °C
- 25
0
25
50
75
100
125
150
175
0.0001
0.001
t
in
(s)
0.01
0.10
1
T
J
- Temperature (°C)
Typical Drain-source Brakdown Voltage
vs. Junction Temperature
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Single Pulse Avalanche Current vs. Time
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
SUP60N02-4m5P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
150
1000
120
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
90
Package Limited
60
Limited
by
r
DS(on)
*
10
µs,
100
µs
1 ms
10 ms
10
100 ms
1 s, 10 s
30
1
T
A
= 25 °C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
A
- Ambient Temperature (°C)
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
r
DS(on)
is specified
Drain Current vs. Ambient Temperature
Safe Operating Area
1
Duty Cycle = 0.5
Normalized
Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square
Wave
Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
http://www.vishay.com/ppg?69821.
Document Number: 69821
S-80182-Rev. A, 04-Feb-08
www.vishay.com
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